Monday, February 25, 2008

US Patent 7332769 - NOR type non-volatile memory having nanocrystalline charge storage

This patent from Gregorio Spaden (unassigned) teaches a NOR type non-volatile memory configuration which uses nanocrystals to enhance charge trapping. Claim 1 reads:

1. A memory block of a semiconductor memory array of a NOR type, comprising a bit line. memory cells which comprise a multilayer charge trapping medium containing nanocrystals, a metal-oxide-semiconductor select transistor that separates said bit line and said memory cells, a semiconductor region enclosed within the drain of said select transistor with a conductivity type that is opposite to that of said drain, and a semiconductor well region shared by said select transistor and said memory cells.