US Patent 7332769 - NOR type non-volatile memory having nanocrystalline charge storage
http://www.freepatentsonline.com/7332769.html
This patent from Gregorio Spaden (unassigned) teaches a NOR type non-volatile memory configuration which uses nanocrystals to enhance charge trapping. Claim 1 reads:
1. A memory block of a semiconductor memory array of a NOR type, comprising a bit line. memory cells which comprise a multilayer charge trapping medium containing nanocrystals, a metal-oxide-semiconductor select transistor that separates said bit line and said memory cells, a semiconductor region enclosed within the drain of said select transistor with a conductivity type that is opposite to that of said drain, and a semiconductor well region shared by said select transistor and said memory cells.
This patent from Gregorio Spaden (unassigned) teaches a NOR type non-volatile memory configuration which uses nanocrystals to enhance charge trapping. Claim 1 reads:
1. A memory block of a semiconductor memory array of a NOR type, comprising a bit line. memory cells which comprise a multilayer charge trapping medium containing nanocrystals, a metal-oxide-semiconductor select transistor that separates said bit line and said memory cells, a semiconductor region enclosed within the drain of said select transistor with a conductivity type that is opposite to that of said drain, and a semiconductor well region shared by said select transistor and said memory cells.
Labels: Gregorio Spaden
posted by blaisemouttet at 5:31 PM
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