Monday, February 25, 2008

US Patent 7332740 - CNT memory with molecular adsorption layer

According to the 2007 International Technology Roadmap for Semiconductors 2011-2013 is the time frame for nanowires and nanotubes to move from the experimental to the development stage in FET design. The basic patents for nanotube channel FETs belong to Infineon and this patent to Samsung teaches a configuration of a CNT memory cell. Claim 1 reads:

1. A memory device comprising: a substrate; a source electrode and a drain electrode formed on the substrate and separated from each other; a carbon nanotube (CNT) electrically connected to the source electrode and the drain electrode; a memory cell contacting the CNT so as to store a charge from the CNT; and a gate electrode formed on the memory cell, wherein the memory cell comprises: a first insulating layer formed on the CNT; a charge storage layer which is formed on the first insulating layer, which stores charges and includes molecular adsorption layer of molecules having an energy level within an energy band gap of the CNT; and a second insulating layer formed on the molecular adsorption layer.