Wednesday, December 05, 2007

US Patent 7303628 - Epitaxial growth of branched nanocrystal hetrostructure

The interface of two different semiconductor materials forms a heterostructure which can be useful in a variety of applications such as lasers and high frequency electronics. This patent from the University of California teaches the formation of a branched hetrostructure nanocrystal. Claim 1 reads:

1. A process of forming a nanocrystal heterostructure, the process comprising: (a) providing a nanocrystal comprising a first semiconductor material and comprising a first end, and (b) forming a segment comprising a second semiconductor material extending epitaxially from the first end to form a nanocrystal heterostructure.