US Patent 7301199 - Nanowire FETs with uniform diameter

http://www.freepatentsonline.com/7301199.html

This patent from Charles Lieber's group at Harvard teaches catalytically grown uniform diameter nanowires used in forming field emission transisistor structures. Claim 1 reads:

1. An electrical component comprising a plurality of field-effect transistors each comprising first and second electrodes and a non-nanotube semiconductor nanoscale wire electrically coupling the first and second electrodes, wherein each of the nanoscale wires of the component comprises at least one portion having a smallest width of less than 500 nanometers, and wherein each of the nanoscale wires of the component is taken from a population of nanoscale wires having a variation in average diameter of less than 20% relative to each other, the population of nanoscale wires being grown catalytically from a population of catalyst particles having a variation in diameter of less than 20%, wherein the diameter of each of the nanoscale wires is determined by the diameter of the catalyst particle from which the nanoscale wire is grown, and wherein each of the nanoscale wires is doped during growth of the nanoscale wire from the catalyst particle.