Thursday, August 09, 2007

US Patent 7253434 - Suspended CNTFET

Carbon nanotube FETs have been proposed in a variety of configurations including structures where the nanotube is used as a vertical structure for gate control and wherein a plurality of nanotubes are aligned over a source/drain connection for gate control. This patent from Harvard proposes a suspended nanotube structure to form the CNTFET. Claim 1 reads:

1. A carbon nanotube field effect transistor comprising: a carbon nanotube having a length suspended between a source electrode and a drain electrode that are together disposed on a common surface of a support structure; a gate dielectric material coaxially coating the suspended nanotube length and coating at least a portion of the source and drain electrodes; and a gate metal layer coaxially coating the gate dielectric material along the suspended nanotube length and overlapping a portion of the source and drain electrodes, separated from the electrodes by the gate dielectric material.