Thursday, September 14, 2006

US Patent 7105118 - Nanodot 3D Matrix

Improvements in mass data storage methods have improved densities to levels of 100 Gbits/square inch and beyond. However, these approaches are limited by the use of only a single layer of material for storing the data. This patent teaches manufacturing a multilayered nanostructrured system for multilevel memory storage (although it appears unclear to me how they will address different levels for the storage.)

Claim 1 reads:

1. A method for forming a nanostructure, comprising self-assembling a three-dimensional multi-layer nanodot arrays of uniform size in a matrix material from a nanodot material based upon a difference in Gibb's free energy of oxidation of the nanodot material and the matrix material.