Thursday, September 07, 2006

US Patent 7101761 - Method of Making Suspended Nanostructure

Cantilevers are common structures formed by micromechanical processing techniques using sacrificial spacer films. This patent teaches using similar techniques in forming nanoscale cantilevered structures for use in forming a coaxial gate structure for a transistor. Claim 1 reads:

1. A method comprising: providing a nanostructure covered on a substrate; oxidizing a first portion of the nanostructure to define a sacrificial layer between the substrate and a second portion of the nanostructure; forming a first support structure over the nanostructure; forming a second support structure over the nanostructure; and removing the sacrificial layer from the nanostructure such that second portion of the nanostructure is suspended a distance from a surface of the substrate between the first and second support structure.