US Patent 8138493 - Nanooptoelectronic semiconductor device
http://www.freepatentsonline.com/8138493.html
This patent from QuNano teaches the formation of nanostructured materials for increasing the efficiency of LEDs in the infrared to green wavelength region. Claim 1 reads:
1. An optoelectronic semiconductor device comprising at least one semiconductor nanowire, wherein:
the nanowire comprises a nanowire core and a shell layer arranged around at least a portion of the nanowire core; and
the nanowire core and the shell layer form a pn or pin junction that in operation provides an active region for carrier generation or carrier recombination;
the active region comprises quantum dots adapted to act as carrier recombination centres or carrier generation centres.
This patent from QuNano teaches the formation of nanostructured materials for increasing the efficiency of LEDs in the infrared to green wavelength region. Claim 1 reads:
1. An optoelectronic semiconductor device comprising at least one semiconductor nanowire, wherein:
the nanowire comprises a nanowire core and a shell layer arranged around at least a portion of the nanowire core; and
the nanowire core and the shell layer form a pn or pin junction that in operation provides an active region for carrier generation or carrier recombination;
the active region comprises quantum dots adapted to act as carrier recombination centres or carrier generation centres.
Labels: QuNano
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