Wednesday, November 23, 2011

US Patent 8063448 - Mem-resistor multi-gate FET

In order to continue the scaling predicted by Moore's Law multi-gate transistors will be necessary in the coming decade. There has also been an increasing interest in nanoscale thin films to achieve memory resistive effects for non-volatile memory. This patent from Infineon Technologies encompasses both these trends resulting in a multi-gate memory transistor having improved data retention and reduced size. Claim 1 reads:

1. A memory device comprising:

a multi gate field effect transistor having a fin with a contact area comprising a cross section of the fin; and

a programmable memory element abutting the contact area.