Thursday, August 25, 2011

US Patent 8003979 - High density coupling of quantum dots to CNTs

In order to improve the efficiency of charge carrier transfer to quantum dots this patent from the Research Foundation of State University of New York teaches a way to integrate quantum dots with carbon nanotubes which is found to improve the efficiency of photodetection at infrared wavelengths. Claim 1 reads:

1. A method of preparing a carbon nanotube-quantum dot conjugate, said method comprising:

providing a plurality of semiconductor quantum dots;

providing a thiol-functionalized carbon nanotube, wherein said thiol-functionalized carbon nanotube has a surface comprising a plurality of terminal thiol groups; and

attaching the plurality of semiconductor quantum dots to the surface of the carbon nanotube under conditions which yield a carbon nanotube-quantum dot conjugate having a density of quantum dots on the surface of the carbon nanotube of between about 1.0 quantum dot particles/100 nm2 and about 4.0 quantum dot particles/100 nm2.