Sunday, June 05, 2011

US Patent 7952088 - Multigate graphene transistor

Modern transistor design are turning toward multigate structures to overcome current leakage and other effects of nanoscale miniaturization. This patent from IBM includes some basic claims for multigate transistor designs in which graphene is used for the channel material. Claim 1 reads:

1. A semiconductor device comprising:

a substrate having a dielectric layer;

at least one graphene layer overlying the dielectric layer;

a back gate structure underlying the at least one graphene layer; and

a semiconductor-containing layer present on the at least one graphene layer, the semiconductor-containing layer including a source region and a drain region separated by an upper gate structure, wherein the upper gate structure is positioned overlying the back gate structure.