Thursday, April 14, 2011

US Patent 7923731 - CNTFET

Over the past decade there have been several designs of field effect transistors based on carbon nanotubes. This latest patent from Tsinghua University and Hon Hai Precision teaches a variation in which metallic nanotubes are eliminated and the nanotube layer is disordered and entangled. Claim 1 reads:

1. A thin film transistor comprising:

a source electrode;

a drain electrode spaced from the source electrode;

a semiconducting layer connected to the source electrode and the drain electrode, the semiconducting layer comprising a carbon nanotube layer, and the carbon nanotube layer comprising a plurality of semiconducting carbon nanotubes;

an insulating layer; and

a gate electrode insulated from the source electrode, the drain electrode, and the semiconducting layer by the insulating layer,

wherein the carbon nanotubes in the carbon nanotube layer are disordered, and entangled with each other.

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