Thursday, April 14, 2011

US Patent 7923283 - 3D carbon integrated circuits

This patent from Fujitsu has foreign priority going back to 2001 and includes some basic claims to forming 3D integrated circuitry using carbon nanotube wiring. Claim 1 reads:

1. A method of producing an integrated circuit device comprising

a plurality of elements fabricated on a semiconductor substrate and wiring members for making the elements and the integrated circuit device function,

wherein at least part of the wiring members are formed of one or more cylindrical structures made up of carbon atoms,

the method comprising using a CVD process for the formation of the cylindrical structures, while applying an alternating current electric field so as to grow the cylindrical structures in two directions.