Thursday, January 27, 2011

US Patent 7875912 - Atomic layer deposition of high-k dielectric

One route toward increased scaling of MOSFET electronics is the use of high-k materials to replace the silicon oxide used in current gate dielectrics. This patent from Micron teaches a new dielectric based on Zr(x)Hf(y)Sn(1-x-y)O2 material formed by atomic layer deposition. Claim 1 reads:

1. An electronic device comprising:

an amorphous dielectric layer containing at least one atomic layer deposited dielectric layer including zirconium oxide, hafnium oxide and tin oxide layers in an integrated circuit; and

a conductive layer contacting the dielectric layer.