US Patent 7723223 - Method of doping CNT transistor

http://www.freepatentsonline.com/7723223.html

Controlled doping of semiconductor material with foreign atoms is a necessary process to manufacture transistors with predictable characteristics. This patent from Samsung teaches a method of such controlled doping for field effect transistors formed using carbon nanotube channels. Claim 1 reads:

1. A method of doping a carbon nanotube (CNT) of a field effect transistor comprising:

providing a source, a drain, the CNT as a channel between the source and the drain, and a gate on a substrate;

applying a first voltage to the gate; and

adsorbing ions on a surface of the CNT.