Thursday, February 25, 2010

US Patent 7666465 - Nanotube in trench fabrication

This patent from Intel teaches an approach to incorporate nanotubes in a semiconductor substrate along the length of openings formed in the substrate. Claim 1 reads:

1. A method of forming a structure comprising:

providing a substrate comprising at least one opening; and

applying a nanotube slurry comprising at least one nanotube to the substrate by utilizing a mechanical process,

wherein the at least one nanotube is substantially placed within the at least one opening, and

wherein a length of the at least one nanotube is oriented substantially parallel with a length of the at least one opening.