US Patent 7626190 - Mem-resistor memory with nanowire transistor

http://www.freepatentsonline.com/7626190.html

This patent from Infineon Technologies teaches another variation of memory resistor electronics which uses nanowire transistors with resistive switching material. Claim 1 reads:

1. A memory device, comprising:

a transistor comprising at least one nanowire or nanotube or nanofibre and a transistor gate region, the nanowire or nanotube or nanofibre being self-aligned with respect to the transistor gate region;

wherein the memory device is a resistively switching memory device; and

wherein the nanowire or nanotube or nanofibre directly contacts a switching active material of the resistively switching memory device.