Friday, September 04, 2009

US Patent 7582975 - Nanowire gap sensor

This patent from HP teaches a method to create gaps in nanowire structures which is reproducible and may facilitate mass production of nanoscale sensors. Claim 1 reads:

1. A nanowire device, comprising:

a nanowire formed between two surfaces;

a gap formed at a predetermined location in the nanowire; and

a protective layer established on each surface of the nanowire without being established on ends of the nanowire adjacent to the gap or adjacent to the two surfaces.