US Patent 7563411 - CNT array manufacturing with multiple gas flow inlets
http://www.freepatentsonline.com/7563411.html
This patent from Hon Hai Precision teaches a device to facilitate the measurement of growth rates of carbon nanotube arrays by using a secondary gas inlet to provide a disturbance gas to quickly stop growth. Claim 1 reads:
1. A device for manufacturing a carbon nanotube array, the device comprising:
a reaction chamber having a first gas inlet, a second gas inlet, and a gas outlet;
a supporting component located in the reaction chamber; and
a gas introducing tube connecting the second gas inlet with the supporting component.
This patent from Hon Hai Precision teaches a device to facilitate the measurement of growth rates of carbon nanotube arrays by using a secondary gas inlet to provide a disturbance gas to quickly stop growth. Claim 1 reads:
1. A device for manufacturing a carbon nanotube array, the device comprising:
a reaction chamber having a first gas inlet, a second gas inlet, and a gas outlet;
a supporting component located in the reaction chamber; and
a gas introducing tube connecting the second gas inlet with the supporting component.
Labels: Hon Hai Precision Industry
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