Friday, November 07, 2008

US Patent 7446053 - Multilayer nanocomposite capacitor

This patent from Hynix Semiconductor teaches forming a capacitor using a ZrO2/TiO2 multilayer nanocomposite material as the dielectric to reduce leakage current in highly integrated semiconductor devices. Claim 1 reads:

1. A method for fabricating a capacitor, comprising:

forming a lower electrode; forming a nano-composite layer over the lower electrode by mixing X number of different sub-layers, where X is a positive integer greater than approximately 1;

densifying the nano-composite layer; and

forming an upper electrode layer over the nano-composite layer.