Thursday, July 03, 2008

US Patent 7394118 - High aspect ratio nanowire backgate chemfet

This patent from the University of Southern California teaches improved response time chemical sensors formed from high aspect ratio metal oxide nanowires. Claim 11 reads:

11. A method, comprising:

exposing a nanowire of a semiconductor metal oxide material made from a laser ablation assisted chemical vapor deposition process to have a uniform diameter throughout a length of said nanowire with an aspect ratio of at least 100:1 to an unknown material; and

electrically characterizing the nanowire after said exposing to determine characteristics of the nanowire connected between two drains of a back gate field effect transistor to detect the unknown material.