Wednesday, July 02, 2008

US Patent 7393736 - ZrHfSnO2 nanolaminate dielectrics

As the continuation of Moore's law becomes more difficult with conventional semiconductor materials a search is underway for better dielectrics. This patent from Micron Technology teaches one variety of high-k dielectrics formed using nanolaminated oxides. Claim 1 reads:

1. A method comprising: forming a substantially planar nanolaminate dielectric layer including at least zirconium oxide, hafnium oxide and tin oxide on a surface of a substrate by atomic layer deposition; and forming a metal layer on the planar nanolaminate dielectric layer.