Thursday, March 13, 2008

US Patent 7342277 - CNTFET with quantum dot gate

There are a variety of proposals for carbon nanotube channels for FETs as well as proposals for using semiconductor nanocrystals (quantum dots) to achieve floating gates in memory design. this patent from Intel teaches combining both concepts by providing a transistor design using both carbon nanotube channel and quantum dots. Claim 1 reads:

1. A transistor, comprising: a source electrode; a drain electrode; at least one semiconducting carbon nanotube electrically coupled between said source and drain electrodes; a gate electrode; and, dielectric material containing one or more quantum dots between said carbon nanotube and said gate electrode, wherein said one or more quantum dots are closer to said gate electrode than to said at least one carbon nanotube.