Wednesday, October 10, 2007

US Patent 7279433 - Fabrication of boron nitride nanoparticle dielectric layer

There is a variety of interest in the use of low-k dielectric materials to improve electrical connections in electronic devices. This patent from Freescale Semiconductor teaches using boron nitride nanotubes as the material for such a dielectric. Claim 1 reads:

1. A method for forming a dielectric layer, comprising: providing a substrate; providing a first material comprising a suspension of boron nitride nanoparticles in a liquid medium; and forming a dielectric layer on the substrate from the suspension through an evaporative process.

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