US Patent 8089797 - Nanowire racetrack memory

http://www.freepatentsonline.com/8089797.html

This patent from Samsung includes a memory technology sounding similar to the racetrack memory invented by IBM using nanowires formed of ferromagnetic material. Claim 1 reads:

1. A memory cell comprising:

a memory cell array unit including a plurality of nano wires arranged vertically on a substrate, each of the plurality of nano wires having a plurality of domains for storing information;

a nano wire selection unit formed on the substrate, the nano wire selection unit being configured to select at least one of the plurality of nano wires;

a domain movement control unit formed on the substrate and configured to control a domain movement operation with respect to at least one of the plurality of nano wires; and

a read/write control unit formed on the substrate and configured to control at least one of a read operation and a write operation with respect to at least one of the plurality of nano wires.