Thursday, July 15, 2010

US Patent 7755082 - Self-aligned CNT transistor

This patent from Intel teaches a variation of a carbon nanotube field effect transistor using self-alignment of the source and drain relative to the channel. Claim 1 reads:

1. A semiconductor structure comprising:

a carbon nanotube formed over a substrate; and

a dielectric layer formed over said carbon nanotube, said dielectric layer having an aperture formed therein, wherein said dielectric layer includes a metal sidewall on each side of said aperture.