Sunday, February 01, 2009

US Patent 7482619 - Nanoflash memory using insulating and charge trapping nanoparticles

Since electronic memory requires the greatest density of transistor fabrication it is likely that these applications will be the first to extensively incorporate nanomaterials. Samsung already has several basic patents in nanomaterial-based non-volatile memory and this patent provides some very broad claims to a charge trap memory based on multiple nanoparticle types which reduces leakage current. Claim 1 reads:

1. A charge trap memory device comprising:

a substrate; and

a gate structure including a charge trapping layer, wherein the charge trapping layer is formed of a composite of charge trapping nanoparticles and insulating nanoparticles.