US 7307030 - Quantum dots formed in substrate concavities

http://www.freepatentsonline.com/7307030.html

Quantum dot films have been developed with various application in optoelectronics but one problem in forming such films is that the quantum dots are oriented in a random manner making it very difficult to form electronics devices that implement quantum cellular logic or quantum computing. This patent from Fujitsu teaches a method of using oxide to form recesses for quantum dot growth to produce controlled positioning of the quantum dots. Claim 1 reads:

1. A method for forming a quantum dot comprising the steps of: forming an oxide in a dot-shape on a surface of a semiconductor substrate; removing the oxide to form a concavity in a position where the oxide has been removed; and growing a semiconductor layer on the semiconductor substrate with the concavity formed in to form a quantum dot of the semiconductor layer in the concavity.