Thursday, July 26, 2007

US Patent 7247897 - Integrated CNT/phase change memory

Certain phase change materials capable of changing between amorphous and crystalline states based on electrical or thermal stimulation are currently being explored for applications in memory devices. This patent from Samsung teaches using a carbon nanotube as a connection wire to phase change film to increase the density of such memory devices. Claim 1 reads:

1. A semiconductor device, comprising: a substrate; a first electrode formed on the substrate; a porous active layer formed on a surface of the electrode; an insulating layer, which is formed on the porous active layer, having a contact hole therethrough to expose a portion of the porous active layer; a carbon nanotube, which is grown on the porous active layer in the contact hole and forms a conductive line as a pathway for electron migration; and a memory thin film on the insulating layer and electrically connected to the carbon nanotube, wherein the memory thin film is made of a phase-change material.

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