<?xml version='1.0' encoding='UTF-8'?><?xml-stylesheet href="http://www.blogger.com/styles/atom.css" type="text/css"?><feed xmlns='http://www.w3.org/2005/Atom' xmlns:openSearch='http://a9.com/-/spec/opensearchrss/1.0/' xmlns:georss='http://www.georss.org/georss' xmlns:gd='http://schemas.google.com/g/2005' xmlns:thr='http://purl.org/syndication/thread/1.0'><id>tag:blogger.com,1999:blog-27469735</id><updated>2012-02-02T19:36:51.161-05:00</updated><category term='University of Florida Research Foundation'/><category term='University of Houston'/><category term='Boise State University'/><category term='E + F Corporation'/><category term='self-assembly'/><category term='Bipolar Technologies'/><category term='LSI Corporation'/><category term='Cambrios Technologies Corporation'/><category term='free'/><category term='Rohm Co.'/><category term='National Tsing Hua University'/><category term='Micron Technology'/><category term='Nanogram'/><category term='University of Central Florida Research Foundation'/><category term='University of Kansas'/><category term='4DS'/><category term='Brigham Young University'/><category term='nanoparticle film'/><category term='Semes Co.'/><category term='Genedics'/><category term='Texas Christian University'/><category term='Acorn Technologies'/><category term='Ovation Polymer Technology and Engineered Materials'/><category term='SanDisk3D'/><category term='Carbon Labs'/><category term='Memjet'/><category term='Czech Technical University in Prague'/><category term='Nano-Electronic and Photonic Devices and Circuits'/><category term='Georgia Tech. 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Ohio State University'/><category term='Adams Golf IP'/><category term='Nano-Tex'/><category term='M.I.T.'/><category term='UChicago Argonne LLC'/><category term='Infineon technologies'/><category term='Rosemount Inc.'/><category term='National Health Research Institutes'/><category term='block co-polymer'/><category term='Quantum Modulation Scientific Inc.'/><category term='Silicon Clocks'/><category term='Wayne State University'/><category term='GP Medical'/><category term='Idemitsu Kosan Co.'/><category term='fullerene'/><category term='carbon nanohorn'/><category term='Rohr Inc.'/><category term='Alces Technology'/><category term='Owens Corning Intellectual Capital'/><category term='Ultradots'/><category term='NanoC'/><category term='Hunan University'/><category term='Foxconn Technology'/><category term='Cornell'/><category term='Genedics Clean Energy'/><category term='BioForce Nanosciences'/><category term='Compagnie Plastic Omnium'/><category term='Techno Network Shikoku'/><category term='Sumitomo Metal Mining Co. 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Lee Moffitt Cancer Center and Research Institute'/><category term='Northwest Missouri State University'/><category term='Doshisha'/><category term='United States Department of Energy'/><category term='Commissariat a l&apos;Energie Atomique'/><category term='Christian-Albrechts-University'/><category term='Rohm and Haas; University of California'/><category term='General Motors'/><category term='Kent State University'/><category term='crossbar arithmetic processor'/><category term='The Regents of the University of California'/><category term='Alabama A+M University Institute'/><category term='Koninklijke Philips Electronics'/><category term='Northwestern University'/><category term='Stanford'/><category term='Los Alamos National labs.'/><category term='Canatu Oy'/><category term='ERS Company'/><category term='Veeco Metrology'/><category term='Nippon Oil Corporation'/><category term='Lexmark'/><category term='Board of Patent Appeals and Interferences'/><category term='Penn State Research Foundation'/><category term='National Institute of Standards and Technology'/><category term='Mitsubishi Gas Chemical Company'/><category term='Philipps-Universitat Marburg'/><category term='Biomet 3I'/><category term='Fuji Xerox'/><category term='CRC for Waste Management and Pollution Control'/><category term='Kimberly-Clark Worldwide'/><category term='Tohoku University'/><category term='nanotweezers'/><category term='Hewlett Packard'/><category term='University of Alberta; University of California'/><category term='Institut National de la Recherche Scientifique'/><category term='Gregorio Spaden'/><category term='Vanguard Solar'/><category term='University of Michigan'/><category term='Brother International Corporation'/><category term='UT-Battelle LLC'/><category term='The Penn State Research Foundation'/><category term='Ohio University'/><category term='Florida Turbine Technologies'/><category term='Nanostellar'/><category term='The United States of America as represented by the Secretary of the Air Force'/><category term='Advanced Cardiovascular Systems'/><category term='Aurora Algae'/><category term='scanning probe microscope'/><category term='Vive Nano'/><category term='Eikos Inc.'/><category term='Medtronic'/><category term='NCR Corporation'/><category term='Midatech Limited'/><category term='scott berkun'/><category term='Dip Pen nanolithography'/><category term='DSM IP Assets B.V.'/><category term='sham'/><category term='Canon'/><category term='Advanced Micro Devices'/><category term='Teledyne Scientific and Imaging'/><category term='Boston Scientific Scimed'/><category term='Inc'/><category term='Matsushita Electric'/><category term='Siemens'/><category term='Blaise Mouttet'/><category term='Honda Motor'/><category term='International Rectifier Corporation'/><category term='Tursiop Technologies'/><category term='Georgia Tech Research Corporation'/><category term='dendrimer'/><category term='Valtion Teknillinen Tutkimuskeskus'/><category term='Nanotech LLC'/><category term='integrated circuit'/><category term='Texas Instruments'/><category term='National Taiwan University'/><category term='database'/><category term='Foster Miller'/><category term='Hermes-Epitek Corp'/><category term='Nanocrystals Technology'/><category term='Beijing Boe Optoelectronics Technology'/><category term='Honda Motor; GSI Creos'/><category term='National University of Singapore'/><category term='Wuhan Splendid Optronics Technology'/><category term='Lubrizol Advanced Materials'/><category term='phase change'/><category term='Radi Medical Systems'/><category term='Kawamura Institute of Chemical Research'/><category term='C.R.F. Societa Consortile per Azioni'/><category term='Albany International Corp.'/><category term='Industrial Technology Research Institute'/><category term='molecular electronics'/><category term='nanotube'/><category term='Visionarts'/><category term='TDK Corporation'/><category term='dielectric'/><category term='nanoparticle ink'/><category term='Goodrich Corporation'/><category term='William Marsh Rice University; Unidym'/><category term='Clarkson University'/><category term='Smith International'/><category term='Zinus'/><category term='Wisys Technology Foundation'/><category term='Aircuity'/><category term='Hitachi'/><category term='Philip Morris'/><category term='New Jersey Institute of Technology'/><category term='Fujitsu'/><category term='Ashland Licensing and Intellectual Property'/><category term='Oxford Superconducting Technology'/><category term='Siemens Energy'/><category term='University of North Texas'/><category term='nanofluidics'/><category term='electrochromatic'/><category term='Applied Photonics Worldwide'/><category term='Document Scanner Technology'/><category term='NASA'/><category term='Consiglio Nazionale Delle Ricerche'/><title type='text'>TinyTechIP</title><subtitle type='html'>Tracking U.S. patents in nanotechnology since 2006</subtitle><link rel='http://schemas.google.com/g/2005#feed' type='application/atom+xml' href='http://tinytechip.blogspot.com/feeds/posts/default'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default?max-results=100'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/'/><link rel='hub' href='http://pubsubhubbub.appspot.com/'/><link rel='next' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default?start-index=101&amp;max-results=100'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author><generator version='7.00' uri='http://www.blogger.com'>Blogger</generator><openSearch:totalResults>2273</openSearch:totalResults><openSearch:startIndex>1</openSearch:startIndex><openSearch:itemsPerPage>100</openSearch:itemsPerPage><entry><id>tag:blogger.com,1999:blog-27469735.post-4465466649877862741</id><published>2012-02-02T19:36:00.000-05:00</published><updated>2012-02-02T19:36:51.171-05:00</updated><title type='text'>HP's memristor delusion</title><content type='html'>Recently EETimes (&lt;a href="http://www.eetimes.com/electronics-news/4234678/Memristor-brouhaha-bubbles-under"&gt;link&lt;/a&gt;)&amp;nbsp; has picked up on e-mail correspondences I have had with a few industry scientists regarding HP's so-called "memristor."&amp;nbsp;I had recently posted an article on ArXiv debunking the mathematical basis for Leon Chua's memristor theory from the 1970's.&amp;nbsp;&amp;nbsp;HP is using the memristor theory to claim credit for a new form of non-volatile memory called RRAM which is under development by Panasonic, Toshiba, Sharp, Unity Semiconductor, and a variety of other companies. It turns out that many of the scientists involved in legitimate research in RRAM view HP's memristor as a foolish gimmick which is being perpetuated by naive academics and science writers.&lt;br /&gt;&lt;br /&gt;The story behind the memristor delusion is actually quite interesting and I went into more detail in a paper I posted on scribd available at this &lt;a href="http://www.scribd.com/doc/79648334/Memristor-Scientific-Method"&gt;link&lt;/a&gt;. The article directly addresses public comments made by Stan Williams, one of the lead researchers of&amp;nbsp;HP.&amp;nbsp; The article also&amp;nbsp;points out&amp;nbsp;some evidence&amp;nbsp;of plagarism&amp;nbsp;in HP's original 2008 Nature paper&amp;nbsp;based on&amp;nbsp;an earlier patent application of Samsung&amp;nbsp;and a paper published in 1968 on&amp;nbsp;resistance switching in titanium oxide thin films.&amp;nbsp;&amp;nbsp;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-4465466649877862741?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/4465466649877862741'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/4465466649877862741'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2012/02/hps-memristor-delusion.html' title='HP&apos;s memristor delusion'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-159221706792614952</id><published>2012-01-31T19:01:00.000-05:00</published><updated>2012-01-31T19:01:19.652-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Oryon Technologies'/><title type='text'>US Patent 8106578 - EL lamp including phosphor and dielectric nanoparticles</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8106578.html"&gt;http://www.freepatentsonline.com/8106578.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from &lt;a href="http://oryontech.com/"&gt;Oryon Technologies&lt;/a&gt; teaches a new electroluminescent nanomaterial which may be useful to flexible electronic devices. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A highly light transmissive EL lamp having a light-emitting layer, where: &lt;br /&gt;&lt;br /&gt;the light-emitting layer of the EL lamp comprises a composition of: &lt;br /&gt;&lt;br /&gt;phosphor nano-particles; &lt;br /&gt;&lt;br /&gt;dielectric nano-particles; and, &lt;br /&gt;&lt;br /&gt;a binder.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-159221706792614952?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/159221706792614952'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/159221706792614952'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2012/01/us-patent-8106578-el-lamp-including.html' title='US Patent 8106578 - EL lamp including phosphor and dielectric nanoparticles'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-7923108703373893398</id><published>2012-01-31T18:54:00.000-05:00</published><updated>2012-01-31T18:54:13.313-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='IBM'/><title type='text'>US Patent 8106383 - Self-aligned graphene transistor</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8106383.html"&gt;http://www.freepatentsonline.com/8106383.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from IBM teaches a way to achieve material processing of both carbon and oxide to achieve self-aligned fabrication of graphene transistors. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A graphene field effect transistor comprising: &lt;br /&gt;&lt;br /&gt;a gate stack, the gate stack including a seed layer, a gate oxide formed over the seed layer, and a gate metal formed over the gate oxide; &lt;br /&gt;&lt;br /&gt;an insulating layer; and &lt;br /&gt;&lt;br /&gt;a graphene sheet displaced between the seed layer and the insulating layer, further comprising: &lt;br /&gt;&lt;br /&gt;a spacer formed on a top and both sides of the gate stack.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-7923108703373893398?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/7923108703373893398'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/7923108703373893398'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2012/01/us-patent-8106383-self-aligned-graphene.html' title='US Patent 8106383 - Self-aligned graphene transistor'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-1226701945714873363</id><published>2012-01-31T18:40:00.000-05:00</published><updated>2012-01-31T18:40:33.751-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Georgia Tech Research Corporation'/><title type='text'>US Patent 8105847 - Nano-sized optical fluorescence label</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8105847.html"&gt;http://www.freepatentsonline.com/8105847.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from Georgia Tech Research Corporation has priority going back to 2003 and includes some basic claims to metal nanoparticle biological tags. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A composition comprising a water-soluble fluorescent label comprising an encapsulated noble metal nanocluster, &lt;br /&gt;&lt;br /&gt;wherein the noble metal nanocluster is about 0.1 nm to 2 nm in diameter without encapsulation, and wherein the fluorescent label exhibits an emission spectrum. &lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-1226701945714873363?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/1226701945714873363'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/1226701945714873363'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2012/01/us-patent-8105847-nano-sized-optical.html' title='US Patent 8105847 - Nano-sized optical fluorescence label'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-4836269588897187726</id><published>2012-01-31T18:34:00.001-05:00</published><updated>2012-01-31T19:02:03.353-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Lockheed Martin'/><title type='text'>US Patent 8105414 - Lead free solder nanocomposite</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8105414.html"&gt;http://www.freepatentsonline.com/8105414.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;For environmental reasons lead is being phased out of solder manufacture and being replaced by tin-based composites which require higher processing temperatures. This patent from Lockheed Martin teaches a metal nanoparticle composite solder allowing for lower processing temperatures. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A composition, comprising: &lt;br /&gt;&lt;br /&gt;metal nanoparticles, said metal nanoparticles comprising copper or aluminum nanocores, &lt;br /&gt;&lt;br /&gt;wherein about 30-50% of the metal nanoparticles have a diameter of 20 nanometers or less but greater than zero, and the remaining 70-50% of the metal nanoparticles have a diameter greater than 20 nanometers.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-4836269588897187726?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/4836269588897187726'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/4836269588897187726'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2012/01/us-patent-8105414-lead-free-solder.html' title='US Patent 8105414 - Lead free solder nanocomposite'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-4343131577153233090</id><published>2012-01-24T13:44:00.000-05:00</published><updated>2012-01-24T13:44:11.084-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Advance Materials Corporation'/><title type='text'>US Patent 8102063 - Pad structure with nanostructured coating film</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8102063.html"&gt;http://www.freepatentsonline.com/8102063.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from Advance Materials Corporation uses nanostructured films to improve the corrosion and scratch resistance of electrical contact pads. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A pad structure, comprising: &lt;br /&gt;&lt;br /&gt;a copper trace pattern on a substrate; &lt;br /&gt;&lt;br /&gt;a nickel layer stacked on the copper trace pattern; &lt;br /&gt;&lt;br /&gt;a gold layer stacked on the nickel layer; and &lt;br /&gt;&lt;br /&gt;a nano-structured coating film stacked on the gold layer, wherein the nano-structured coating film infiltrates surface grain boundary of the gold layer.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-4343131577153233090?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/4343131577153233090'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/4343131577153233090'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2012/01/us-patent-8102063-pad-structure-with.html' title='US Patent 8102063 - Pad structure with nanostructured coating film'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-6971702075678718594</id><published>2012-01-24T13:40:00.000-05:00</published><updated>2012-01-24T13:40:12.318-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Samsung'/><title type='text'>US Patent 8101980 - Embedded gate graphene transistor</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8101980.html"&gt;http://www.freepatentsonline.com/8101980.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from Samsung teaches a simplified method for manufacturing graphene nano-ribbon transistors. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A graphene device comprising: &lt;br /&gt;&lt;br /&gt;at least one embedded gate on a substrate; &lt;br /&gt;&lt;br /&gt;an upper oxide layer on the at least one embedded gate; and &lt;br /&gt;&lt;br /&gt;a graphene channel and a plurality of electrodes on the upper oxide layer, the plurality of electrodes including a source electrode and a drain electrode, &lt;br /&gt;&lt;br /&gt;wherein the at least one embedded gate does not overlap with the source electrode and the drain electrode.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-6971702075678718594?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6971702075678718594'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6971702075678718594'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2012/01/us-patent-8101980-embedded-gate.html' title='US Patent 8101980 - Embedded gate graphene transistor'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-5521604194770980288</id><published>2012-01-24T13:34:00.000-05:00</published><updated>2012-01-24T13:34:20.802-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='IBM'/><title type='text'>US Patent 8101474 - Buried-channel graphene field effect device</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8101474.html"&gt;http://www.freepatentsonline.com/8101474.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;It has been found that the gate dielectric can deteriorate the channel mobility of graphene transistors. This patent from IBM teaches a way to manufacture a graphene transistor to avoid this problem. Claim 10 reads:&lt;br /&gt;&lt;br /&gt;&lt;em&gt;10.  A buried channel graphene device comprising: &lt;/em&gt;&lt;br /&gt;&lt;br /&gt;&lt;em&gt;a substrate; &lt;/em&gt;&lt;br /&gt;&lt;br /&gt;&lt;em&gt;a layer of graphene on said substrate;&lt;/em&gt;&lt;br /&gt;&lt;br /&gt;&lt;em&gt;a layer of amorphous silicon on said graphene layer; &lt;/em&gt;&lt;br /&gt;&lt;br /&gt;&lt;em&gt;a gate dielectric layer on said amorphous silicon layer; &lt;/em&gt;&lt;br /&gt;&lt;br /&gt;&lt;em&gt;source and drain contact regions in contact with said graphene layers; and&lt;/em&gt;&lt;br /&gt;&lt;br /&gt;&lt;em&gt;a gate electrode on said gate dielectric layer in between said source and drain contact regions.&lt;/em&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-5521604194770980288?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/5521604194770980288'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/5521604194770980288'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2012/01/us-patent-8101474-buried-channel.html' title='US Patent 8101474 - Buried-channel graphene field effect device'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-6264647076820371875</id><published>2012-01-24T13:23:00.000-05:00</published><updated>2012-01-24T13:23:55.115-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Mitsubishi'/><title type='text'>US Patent 8101149 - Uh-oh, carbon nanomaterial submarine patent</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8101149.html"&gt;http://www.freepatentsonline.com/8101149.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;Companies and patent attorneys involved in carbon nanotechnologies may want to note this patent from Mitsubishi Corporation. The patent priority goes back to 1990 so it is a potential &lt;a href="http://en.wikipedia.org/wiki/Submarine_patent"&gt;submarine patent&lt;/a&gt;. The patent includes some very basic claims to carbon molecular structures that could arguably be applied to carbon nanotubes and other carbon nanostructures.&amp;nbsp;A parent patent (&lt;a href="http://www.freepatentsonline.com/7494638.html"&gt;US 7494638&lt;/a&gt;)&amp;nbsp;issued back in 2009 but only included claims limited to C60 and C70.&amp;nbsp;The first seven claims of this more recent patent are listed below.&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. Purified cage molecules consisting of carbon atoms. &lt;br /&gt;&lt;br /&gt;2. Purified cage molecules consisting of carbon atoms in solid form. &lt;br /&gt;&lt;br /&gt;3. Crystalline cage molecules consisting of carbon atoms. &lt;br /&gt;&lt;br /&gt;4. A macroscopic amount of purified cage molecules consisting of carbon atoms. &lt;br /&gt;&lt;br /&gt;5. A formed or molded product comprising purified C60 and/or C70. &lt;br /&gt;&lt;br /&gt;6. A free-flowing particulate comprising cage molecules consisting of carbon atoms in microcrystalline form. &lt;br /&gt;&lt;br /&gt;7. A solid comprising a macroscopic amount of cage molecules consisting of carbon atoms in crystalline form. &lt;br /&gt;&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-6264647076820371875?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6264647076820371875'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6264647076820371875'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2012/01/us-patent-8101149-uh-oh-carbon.html' title='US Patent 8101149 - Uh-oh, carbon nanomaterial submarine patent'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-8219816212048805468</id><published>2012-01-24T13:11:00.000-05:00</published><updated>2012-01-24T13:11:10.385-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Intel'/><title type='text'>US Patent 8100314 - CNT solder</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8100314.html"&gt;http://www.freepatentsonline.com/8100314.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;Electromigration is the transport of material due to ion drift and can be damaging to solder at high current densities. This patent from Intel teaches using carbon nanotubes to form a solder in which electromigration problems are reduced. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A bump comprising: &lt;br /&gt;&lt;br /&gt;a solder paste comprising solder powder and a paste ingredient mixed with the solder powder; and &lt;br /&gt;&lt;br /&gt;carbon nanotubes (CNTs) dispersed within the solder paste with a pre-defined volume fraction, wherein the pre-defined volume fraction ranges from approximately 30% to 40%, to provide high electrical conductivity; &lt;br /&gt;&lt;br /&gt;wherein the solder paste is attached to at least one of a die or a package substrate.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-8219816212048805468?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/8219816212048805468'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/8219816212048805468'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2012/01/us-patent-8100314-cnt-solder.html' title='US Patent 8100314 - CNT solder'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-8236689856634811884</id><published>2012-01-22T18:37:00.000-05:00</published><updated>2012-01-22T18:37:56.697-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Xerox'/><title type='text'>US Patent 8099035 - CNT heat layer for printer fuser</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8099035.html"&gt;http://www.freepatentsonline.com/8099035.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from Xerox teaches a way to&amp;nbsp;use carbon nanotubes to form a heater layer in a fuser of a printer. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A fuser member comprising: &lt;br /&gt;&lt;br /&gt;a substrate; &lt;br /&gt;&lt;br /&gt;a continuous phase metal heat inductive layer disposed on the substrate, the continuous phase metal heat inductive layer comprising an interpenetrating network of carbon nanotubes dispersed therein; and &lt;br /&gt;&lt;br /&gt;an outer layer comprising a fluoropolymer disposed on the heat inductive layer.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-8236689856634811884?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/8236689856634811884'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/8236689856634811884'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2012/01/us-patent-8099035-cnt-heat-layer-for.html' title='US Patent 8099035 - CNT heat layer for printer fuser'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-8499672607284161075</id><published>2012-01-22T18:30:00.000-05:00</published><updated>2012-01-22T18:30:35.715-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='The Regents of the University of California'/><title type='text'>US Patent 8097922 - Nanoscale transistor with enhanced carrier mobility</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8097922.html"&gt;http://www.freepatentsonline.com/8097922.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;Strain engineering is a technique used in transistor manufacture to increase the carrier mobility and transistor switching speed but can also result in a reduction in thermal conductivity leading to overheating. This patent from the Regents of the University of California teaches an alternative way to increase transistor speed using a high thermal conductivity nanoscale barrier shell. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A transistor having high carrier mobility comprising: &lt;br /&gt;&lt;br /&gt;a drain structure; &lt;br /&gt;&lt;br /&gt;a source structure; &lt;br /&gt;&lt;br /&gt;a channel formed of a channel material and extending between the drain structure and the source structure, wherein at least one of a thickness and a diameter of the channel is in an order of a thermal phonon wavelength of the channel material; &lt;br /&gt;&lt;br /&gt;a barrier shell formed of a barrier shell material having an acoustic impedance of at least 2 times an acoustic impedance of the channel material that at least substantially surrounds a portion of the channel such that the barrier shell confines acoustic phonons in the channel material of the channel; &lt;br /&gt;&lt;br /&gt;a gate structure; and &lt;br /&gt;&lt;br /&gt;a gate insulator between a portion of the gate structure and the barrier shell.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-8499672607284161075?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/8499672607284161075'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/8499672607284161075'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2012/01/us-patent-8097922-nanoscale-transistor.html' title='US Patent 8097922 - Nanoscale transistor with enhanced carrier mobility'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-3744600517575534629</id><published>2012-01-22T18:17:00.000-05:00</published><updated>2012-01-22T18:17:09.527-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Commissariat a l&apos;Energie Atomique'/><title type='text'>US Patent 8097233 - Synthesis of nanoparticles by laser pyrolysis</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8097233.html"&gt;http://www.freepatentsonline.com/8097233.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent teaches a laser pyrolysis manufacturing method of nanoparticles which is suggested to provide the advantages of more uniform nanoparticle sizes with a higher hourly yield. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A method for synthesizing nanoparticles by laser pyrolysis, in which at least one precursor interacts, in the vapor phase, with a laser beam in a pyrolysis reactor to produce nanoparticles, wherein the precursor is: &lt;br /&gt;&lt;br /&gt;first in the liquid phase, then, converted to the vapor phase in an evaporator, before injection into the reactor, and &lt;br /&gt;&lt;br /&gt;wherein a flow rate of the precursor in the liquid phase is controlled for continuous injection into the reactor, &lt;br /&gt;&lt;br /&gt;wherein the precursor in the liquid phase has a flow rate that is substantially continuous and controlled by a mass flow controller.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-3744600517575534629?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/3744600517575534629'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/3744600517575534629'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2012/01/us-patent-8097233-synthesis-of.html' title='US Patent 8097233 - Synthesis of nanoparticles by laser pyrolysis'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-1521682534688755214</id><published>2012-01-22T18:07:00.000-05:00</published><updated>2012-01-22T18:07:09.798-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Samsung'/><title type='text'>US Patent 8096263 - Inkjet printing of magnetic nanoparticles</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8096263.html"&gt;http://www.freepatentsonline.com/8096263.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;Inkjet printing of nanoparticles has been under development over the past decade to provide inexpensive manufacture of conductive lines in microcircuitry. This patent from Samsung attempts to address the problem&amp;nbsp;of nanoparticle&amp;nbsp;dispersion during inkjet printing&amp;nbsp;using a magnetic field generator. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A circuit line forming device, comprising: &lt;br /&gt;&lt;br /&gt;an inkjet head to eject a conductive ink onto one side of a substrate, the conductive ink containing nanoparticles comprising a ferromagnetic core and a conductive layer surrounding the ferromagnetic core; and &lt;br /&gt;&lt;br /&gt;a magnetic field generator part, positioned on the other side of the substrate in correspondence with the inkjet head, wherein the magnetic field generator part comprises a power source and a coil receiving an electric current from the power source to form a magnetic field and applies a magnetic field on the conductive ink, when the conductive ink is ejected to form circuit lines.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-1521682534688755214?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/1521682534688755214'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/1521682534688755214'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2012/01/us-patent-8096263-inkjet-printing-of.html' title='US Patent 8096263 - Inkjet printing of magnetic nanoparticles'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-6611627275677240972</id><published>2012-01-17T21:30:00.000-05:00</published><updated>2012-01-17T21:30:58.400-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Cambrios Technologies Corporation'/><title type='text'>US Patent 8094247 - Nanowire-based touch screen</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8094247.html"&gt;http://www.freepatentsonline.com/8094247.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;Metal and metal oxide nanowires&amp;nbsp;are being developed as a transparent conductive electrode material for flexible displays. This patent from Cambrios&amp;nbsp;Technologies&amp;nbsp;suggests metal nanowires to form the conductive layers in touch panel displays. Claim 4 reads:&lt;br /&gt;&lt;br /&gt;&lt;em&gt;4. A multi-layer structure comprising: &lt;/em&gt;&lt;em&gt;&lt;br /&gt;&lt;/em&gt;&lt;br /&gt;&lt;em&gt;a substrate; &lt;/em&gt;&lt;em&gt;&lt;br /&gt;&lt;/em&gt;&lt;br /&gt;&lt;em&gt;a conductive layer formed on the substrate, wherein the conductive layer comprises a first plurality of metallic nanowires, the first plurality of metallic nanowires reaching an electrical percolation level; and &lt;/em&gt;&lt;br /&gt;&lt;br /&gt;&lt;em&gt;an overcoat formed on the conductive layer, the overcoat incorporating a second plurality of conductive particles, the second plurality of conductive particles being below the electrical percolation level, and wherein the overcoat is surface conductive.&lt;/em&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-6611627275677240972?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6611627275677240972'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6611627275677240972'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2012/01/us-patent-8094247-nanowire-based-touch.html' title='US Patent 8094247 - Nanowire-based touch screen'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-6145285607354571272</id><published>2012-01-17T21:21:00.000-05:00</published><updated>2012-01-17T21:21:10.793-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Stevens Institute of Technology'/><title type='text'>US Patent 8093786 - Branched nanoscale piezoelectric structures</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8093786.html"&gt;http://www.freepatentsonline.com/8093786.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from the Stevens Institute of Technology teaches a method to form piezoelectric nanofibers via electrospinning which may help enable the creation of nanoscale sensors and actuators. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. An article, comprising a nanoscale piezoelectric structure including a branched structure having a stem with a plurality of branches extending therefrom wherein said stem and at least one of said plurality of branches includes a piezoelectric material. &lt;br /&gt;&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-6145285607354571272?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6145285607354571272'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6145285607354571272'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2012/01/us-patent-8093786-branched-nanoscale.html' title='US Patent 8093786 - Branched nanoscale piezoelectric structures'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-9217012848233355675</id><published>2012-01-17T21:11:00.000-05:00</published><updated>2012-01-17T21:11:37.324-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Honda Motor'/><title type='text'>US Patent 8093669 - Magnetic nanotransistor</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8093669.html"&gt;http://www.freepatentsonline.com/8093669.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from Honda Motor teaches a new type of nanotransistor based on switching the magnetic moment of a particle attached to a carbon nanotube. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A magnetic nanotransistor, comprising: &lt;br /&gt;&lt;br /&gt;a first magnetizable electrode; &lt;br /&gt;&lt;br /&gt;a second magnetizable electrode; and &lt;br /&gt;&lt;br /&gt;at least one nanotube arranged between the first magnetizable electrode and the second magnetizable electrode wherein the nanotube has at least one magnetic particle attached thereto and wherein the magnetic moment of the particle is capable of being reversed by application of an external magnetic field.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-9217012848233355675?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/9217012848233355675'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/9217012848233355675'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2012/01/us-patent-8093669-magnetic.html' title='US Patent 8093669 - Magnetic nanotransistor'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-6116259651081061634</id><published>2012-01-17T21:01:00.000-05:00</published><updated>2012-01-17T21:01:45.120-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='M.I.T.'/><title type='text'>US Patent 8093144 - Nanoassembly using charge patterns</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8093144.html"&gt;http://www.freepatentsonline.com/8093144.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from MIT has priority going back to 2002 and teaches a type of nanoscale bottom up assembly based on the use of charge patterns to attract molecular structures. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A method for forming a feature, the method comprising: &lt;br /&gt;&lt;br /&gt;creating a net charge pattern on a substrate by means of at least one energy beam, the charge pattern having a first type of charge; and &lt;br /&gt;&lt;br /&gt;introducing a plurality of at least one of molecular-size scale and nanoscale building blocks to a region proximate the charge pattern, the building blocks having a second type of charge and directly imaging the charge pattern to form the feature, the building blocks being introduced by dusting, such that the building blocks adhere only to the charge pattern.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-6116259651081061634?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6116259651081061634'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6116259651081061634'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2012/01/us-patent-8093144-nanoassembly-using.html' title='US Patent 8093144 - Nanoassembly using charge patterns'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-2855227310454232817</id><published>2012-01-17T20:52:00.000-05:00</published><updated>2012-01-17T20:52:23.695-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='3M Innovative Properties'/><title type='text'>US Patent 8092904 - Optical article including a SWCNT antistatic layer</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8092904.html"&gt;http://www.freepatentsonline.com/8092904.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;Static charges can attract dust and&amp;nbsp;have an adverse effect&amp;nbsp;during the manufacture of&amp;nbsp;optical articles such as the glass used in flat panel displays.&amp;nbsp;This patent from 3M teaches a solution to this problem by using an antistatic layer formed from single walled carbon nanotubes. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. An optical article comprising: &lt;br /&gt;&lt;br /&gt;a first optical layer; &lt;br /&gt;&lt;br /&gt;a second optical layer; and &lt;br /&gt;&lt;br /&gt;an antistatic layer disposed between the first and second optical layers, the antistatic layer comprising conducting particles having an aspect ratio greater than about 10 and comprising single-walled carbon nanotubes having a length of 100 um or less and a diameter of 2 nm or less, wherein the antistatic layer has an average total thickness of less than about 10 nm and exhibits a surface resistivity of greater than about 1×108 ohms/sq.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-2855227310454232817?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/2855227310454232817'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/2855227310454232817'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2012/01/us-patent-8092904-optical-article.html' title='US Patent 8092904 - Optical article including a SWCNT antistatic layer'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-8949668817841081077</id><published>2012-01-17T20:45:00.000-05:00</published><updated>2012-01-17T20:45:19.899-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='E.I. du Pont de Nemours and Company'/><title type='text'>US Patent 8092566 - Polymeric nanofiber filtration media</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8092566.html"&gt;http://www.freepatentsonline.com/8092566.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from DuPont teaches an alternative filter media for HVAC air filters based on polymer nanofibers which can improve the filtration efficiency and reduce the chance of health hazard&amp;nbsp;from the more conventional microglass filters. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A composite fabric comprising a web of electroblown polymeric nanofibers solvent-bonded to a first support web comprising fibers of larger average diameter than the nanofibers and spun from a material compatible with said nanofibers, in the absence of an adhesive between the webs and wherein the nanofibers are solvent-bonded to the support web by the processing solvent from which the polymeric nanofibers are blown and which is entrained in the nanofiber web.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-8949668817841081077?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/8949668817841081077'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/8949668817841081077'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2012/01/us-patent-8092566-polymeric-nanofiber.html' title='US Patent 8092566 - Polymeric nanofiber filtration media'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-8099711125547841408</id><published>2012-01-08T14:52:00.002-05:00</published><updated>2012-01-08T15:41:51.683-05:00</updated><title type='text'>Top Ten Memresistor Patent Holders</title><content type='html'>Back in 2010 I published an article in the Nanotechnology Law &amp;amp;Business Journal (&lt;a href="http://www.nanolabweb.com/index.cfm/action/main.default.viewArticle/articleID/334/CFID/5583170/CFTOKEN/41053299/index.html"&gt;link&lt;/a&gt;) discussing the business prospects of memristive electronics. I recently updated the data from this article to be current as of Jan 01, 2012 including data sorted by patent issue year, claimed application (memory, logic/computing, or neuromorphics) and claimed material (phase change, solid electrolyte, metal oxide, or molecular/polymer). The updated data is available at &lt;a href="http://memresistor.wordpress.com/article/business-landscape-for-memresistor-electronics/"&gt;this link&lt;/a&gt;. &lt;br /&gt;&lt;br /&gt;Below is the list of the top 10 patent holding companies along with the primary class of material covered by the patents.&lt;br /&gt;&lt;br /&gt;1) Samsung (387 US patents, phase change)&lt;br /&gt;2) Micron (371 US patents, solid electrolyte)&lt;br /&gt;3) Macronix (171 US patents, phase change)&lt;br /&gt;4) Ovonyx (165 US patents, phase change)&lt;br /&gt;5) IBM (126 US patents phase change)&lt;br /&gt;6) HP (108 US patents, molecular)&lt;br /&gt;7) Toshiba (108 US patents, metal oxide)&lt;br /&gt;8) Sharp (107 US patents, metal oxide)&lt;br /&gt;9) Intel (89 US patents, phase change)&lt;br /&gt;10) Qimonda (88 US patents, phase change)&lt;br /&gt;&lt;br /&gt;It is notable that the material covered by these patents may not necessarily be the same material that these companies are actually pursuing. For example, Micron seems to be committed to phase change memory rather than the solid electrolyte memory described in the bulk of their patents (&lt;a href="http://www.theregister.co.uk/2011/12/02/micron_pcm_video/"&gt;link&lt;/a&gt;). Also, as&amp;nbsp;I have mentioned in this blog before, HP and Hynix are working on&amp;nbsp;metal oxide ReRAM which HP is claiming&amp;nbsp;as&amp;nbsp;the fabled&amp;nbsp;"missing memristor"&amp;nbsp;of Leon Chua.&amp;nbsp;Most of HP's&amp;nbsp;memory resistor&amp;nbsp;patents&amp;nbsp;focus on&amp;nbsp;using molecular materials for resistance switching and Hynix Semiconductor (#13 on the list) have almost all of their patents (62/71) dedicated to phase change material. Meanwhile, Samsung (e.g. &lt;a href="http://www.google.com/patents?id=vwOtAAAAEBAJ&amp;amp;printsec=frontcover&amp;amp;dq=7417271&amp;amp;hl=en&amp;amp;ei=8ViTTujdAen40gHE0Okg&amp;amp;sa=X&amp;amp;oi=book_result&amp;amp;ct=result&amp;amp;resnum=1&amp;amp;ved=0CC8Q6AEwAA"&gt;US Patent 7417271&lt;/a&gt;) and&amp;nbsp;Sharp (e.g. &lt;a href="http://www.google.com/patents?id=9iPWAAAAEBAJ&amp;amp;printsec=frontcover&amp;amp;dq=patent:7796416&amp;amp;hl=en&amp;amp;ei=PVyTTvqCA-bX0QHO6ahD&amp;amp;sa=X&amp;amp;oi=book_result&amp;amp;ct=result&amp;amp;resnum=1&amp;amp;ved=0CC8Q6AEwAA"&gt;US Patent 7796416&lt;/a&gt;) hold the bulk of the metal oxide patents which HP and Hynix&amp;nbsp;would require to commercialize their "memristor".&lt;br /&gt;&lt;br /&gt;It is curious to me that Hynix is working towards manufacturing a form of ReRAM that, if successful, will render most of their phase change memory resistor patents useless. If I were cynical I would almost think that someone at Hynix were working behind the scenes (perhaps with other of the companies heavily invested in phase change memory) to screw over HP in 2013. &lt;br /&gt;&lt;br /&gt;A spreadsheet containing the complete patent data is available by sending an E-mail to tinytechip@gmail.com including the subject “memresistor patents”.&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-8099711125547841408?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/8099711125547841408'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/8099711125547841408'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2012/01/top-ten-memresistor-patent-holders.html' title='Top Ten Memresistor Patent Holders'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-6982572334380062270</id><published>2012-01-03T17:46:00.000-05:00</published><updated>2012-01-03T17:46:23.077-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Samsung'/><title type='text'>US Patent 8089797 - Nanowire racetrack memory</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8089797.html"&gt;http://www.freepatentsonline.com/8089797.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from Samsung includes a memory technology sounding similar to the &lt;a href="http://en.wikipedia.org/wiki/Racetrack_memory"&gt;racetrack memory&lt;/a&gt; invented by IBM using nanowires formed of ferromagnetic material. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A memory cell comprising: &lt;br /&gt;&lt;br /&gt;a memory cell array unit including a plurality of nano wires arranged vertically on a substrate, each of the plurality of nano wires having a plurality of domains for storing information; &lt;br /&gt;&lt;br /&gt;a nano wire selection unit formed on the substrate, the nano wire selection unit being configured to select at least one of the plurality of nano wires; &lt;br /&gt;&lt;br /&gt;a domain movement control unit formed on the substrate and configured to control a domain movement operation with respect to at least one of the plurality of nano wires; and &lt;br /&gt;&lt;br /&gt;a read/write control unit formed on the substrate and configured to control at least one of a read operation and a write operation with respect to at least one of the plurality of nano wires. &lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-6982572334380062270?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6982572334380062270'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6982572334380062270'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2012/01/us-patent-8089797-nanowire-racetrack.html' title='US Patent 8089797 - Nanowire racetrack memory'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-6790060088911699211</id><published>2012-01-03T17:38:00.000-05:00</published><updated>2012-01-03T17:38:26.526-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Nanosys'/><title type='text'>US Patent 8089152 - Graded permittivity dielectrics using nanostructures</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8089152.html"&gt;http://www.freepatentsonline.com/8089152.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;One of the ways to extend Moore's Law is to find new dielectrics with higher permittivity in place of the silicon dioxide used as the gate insulator of MOSFETs. This patent from &lt;a href="http://www.nanosysinc.com/"&gt;Nanosys&lt;/a&gt; teaches an interesting technique to engineer dielectric material using nanostructures to provide a graded permittivity. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A memory gate stack comprising a graded artificial dielectric, comprising: &lt;br /&gt;&lt;br /&gt;(a) a dielectric material; &lt;br /&gt;&lt;br /&gt;(b) a first region within the dielectric material with a plurality of nanostructures having one or more characteristics embedded therein; and &lt;br /&gt;&lt;br /&gt;(c) a second region within the dielectric material with a plurality of nanostructures having one or more characteristics embedded therein; &lt;br /&gt;&lt;br /&gt;wherein at least one of the one or more nanostructure characteristics is spatially varied from the first region to the second region, wherein the spatial variance is gradual and consistent from the first region to the second region. &lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-6790060088911699211?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6790060088911699211'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6790060088911699211'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2012/01/us-patent-8089152-graded-permittivity.html' title='US Patent 8089152 - Graded permittivity dielectrics using nanostructures'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-8698622373236246385</id><published>2012-01-03T17:30:00.000-05:00</published><updated>2012-01-03T17:30:48.017-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Industrial Technology Research Institute'/><title type='text'>US Patent 8088855 - Powder coating paint including carbon nanocapsules</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8088855.html"&gt;http://www.freepatentsonline.com/8088855.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent&amp;nbsp;from Industrial Technology Research Institute includes some broad claims for&amp;nbsp;an electrically conductive powder coating spray including carbon nanocapsules which helps dissipate static electricity. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A powder coating paint, comprising: &lt;br /&gt;&lt;br /&gt;90 to 99.9 parts by weight of a resin matrix; and &lt;br /&gt;&lt;br /&gt;0.1 to 10 parts by weight of a carbon nanocapsule dispersed in the resin matrix, wherein the powder coating paint is in a powder form. &lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-8698622373236246385?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/8698622373236246385'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/8698622373236246385'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2012/01/us-patent-8088855-powder-coating-paint.html' title='US Patent 8088855 - Powder coating paint including carbon nanocapsules'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-762517710095411984</id><published>2012-01-03T17:25:00.000-05:00</published><updated>2012-01-03T17:25:26.383-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Centre National de al Recherche Scientifique'/><category scheme='http://www.blogger.com/atom/ns#' term='Commissariat a l&apos;Energie Atomique'/><title type='text'>US Patent 8088674 - Horizontal single crystal nanowire growth</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8088674.html"&gt;http://www.freepatentsonline.com/8088674.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;Nanowire&amp;nbsp;transistor designs based&amp;nbsp;on vertically&amp;nbsp;grown nanowires&amp;nbsp;have been proposed&amp;nbsp;but are incompatible with common transistor structures in which the channel is parallel to the silicon substrate. This patent teaches one method for growing semiconductor nanowires laterally which may&amp;nbsp;provide better compatibility with conventional transistor manufacture. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A method of growing a nanowire made from single-crystal semi-conductor material, comprising successively: &lt;br /&gt;&lt;br /&gt;providing a substrate with two electrodes made from metallic material on a layer of dielectric material, one of the electrodes comprising a layer of catalyst directly in contact with the layer of dielectric material; and &lt;br /&gt;&lt;br /&gt;growing the nanowire made from single-crystal semi-conductor material by means of the catalyst, the nanowire growing in contact with the dielectric material and with a diameter equal to a thickness of the layer of catalyst.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-762517710095411984?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/762517710095411984'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/762517710095411984'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2012/01/us-patent-8088674-horizontal-single.html' title='US Patent 8088674 - Horizontal single crystal nanowire growth'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-5071605188762097178</id><published>2012-01-03T17:17:00.000-05:00</published><updated>2012-01-03T17:17:27.797-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Micron Technology'/><title type='text'>US Patent 8088643 - Memresistor with nanoparticle assisted filament formation</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8088643.html"&gt;http://www.freepatentsonline.com/8088643.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;Since the late 1990's Micron Technology&amp;nbsp;has been&amp;nbsp;experimenting with new types of non-volatile memory based on ionic chalcogenide materials. This latest patent teaches how nanoparticles can be used to assist in filament electroformation&amp;nbsp;of these memories. Claim 1 reads:&lt;br /&gt;&lt;i&gt;1. A method of forming a memory device, comprising: &lt;br /&gt;&lt;br /&gt;providing a first electrode; &lt;br /&gt;&lt;br /&gt;providing a nanoparticle over said first electrode; &lt;br /&gt;&lt;br /&gt;providing a chalcogenide glass over and surrounding the nanoparticle except where the nanoparticle is in contact with said first electrode; and &lt;br /&gt;&lt;br /&gt;providing a second electrode over said chalcogenide glass.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-5071605188762097178?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/5071605188762097178'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/5071605188762097178'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2012/01/us-patent-8088643-memresistor-with.html' title='US Patent 8088643 - Memresistor with nanoparticle assisted filament formation'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-3969865987725167078</id><published>2012-01-03T17:11:00.000-05:00</published><updated>2012-01-03T17:11:02.985-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Aurora Algae'/><title type='text'>US Patent 8088614 - Production and purification of biofuel from plants and microalgae</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8088614.html"&gt;http://www.freepatentsonline.com/8088614.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from &lt;a href="http://www.aurorainc.com/"&gt;Aurora Algae&lt;/a&gt; teaches a way to use carbon-based nanomaterials to extract oil from biomaterial. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A process for recovering an oil product from an organism, comprising: &lt;br /&gt;&lt;br /&gt;(a) obtaining a crude extract from an organismal biomass; &lt;br /&gt;&lt;br /&gt;(b) applying said crude extract to a composition comprising a nanomaterial; and &lt;br /&gt;&lt;br /&gt;(c) recovering said oil product from said composition comprising the nanomaterial.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-3969865987725167078?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/3969865987725167078'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/3969865987725167078'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2012/01/us-patent-8088614-production-and.html' title='US Patent 8088614 - Production and purification of biofuel from plants and microalgae'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-7464235728106172051</id><published>2012-01-03T17:03:00.000-05:00</published><updated>2012-01-03T17:03:25.754-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Xerox'/><title type='text'>US Patent 8088544 - Polyester core-shell nanoparticles</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8088544.html"&gt;http://www.freepatentsonline.com/8088544.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;Perhaps the most widely used application of microparticles is&amp;nbsp;in toners&amp;nbsp;for laser printers. This patent from Xerox teaches nanosized toner particles which lowers the temperature necessary to fuse the toner to paper. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. Core-shell nano-sized particles comprising particles having a core and a shell, &lt;br /&gt;&lt;br /&gt;wherein the core of the particles comprises crystalline polyester and the shell of the particles comprises amorphous polyester and is substantially to completely free of crystalline material, &lt;br /&gt;&lt;br /&gt;wherein the shell encapsulates the core, and wherein the nano-sized particles have an average particle size of about 1 nm to about 250 nm. &lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-7464235728106172051?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/7464235728106172051'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/7464235728106172051'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2012/01/us-patent-8088544-polyester-core-shell.html' title='US Patent 8088544 - Polyester core-shell nanoparticles'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-550546620505743902</id><published>2012-01-03T16:54:00.000-05:00</published><updated>2012-01-03T16:54:30.064-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='National University Corporation Hokkaido University'/><category scheme='http://www.blogger.com/atom/ns#' term='Rohm Co.'/><title type='text'>US Patent 8088484 - Metallic nano-chain photodetector</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8088484.html"&gt;http://www.freepatentsonline.com/8088484.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent teaches a new type of nanostructured photosensor based on the plasmon resonance absorption effect&amp;nbsp;which provides&amp;nbsp;improved wavelength selectivity. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A metallic structure comprising a metallic nano-chain with plasmon resonance absorption, &lt;br /&gt;&lt;br /&gt;wherein the metallic nano-chain is formed of a plurality of metallic nanoparticles mutually linked with a plurality of bottlenecks; and &lt;br /&gt;&lt;br /&gt;each of the metallic nanoparticles is formed in any one of a circular shape, a triangle shape, and a rhomboid shape.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-550546620505743902?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/550546620505743902'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/550546620505743902'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2012/01/us-patent-8088484-metallic-nano-chain.html' title='US Patent 8088484 - Metallic nano-chain photodetector'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-5756913240470934341</id><published>2012-01-03T16:47:00.000-05:00</published><updated>2012-01-03T16:47:04.424-05:00</updated><title type='text'>US Patent 8088193 - Nanoparticle production via rubbing</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8088193.html"&gt;http://www.freepatentsonline.com/8088193.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from inventor Taofang Zeng teaches an inexpensive chemical method to manufacture nanoparticles using polishing equipment from chemical-mechanical planarization (CMP). Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A method for making nanoparticles, comprising: &lt;br /&gt;&lt;br /&gt;dipping a metal element in a solution that contains metallic ions or ions with a metal, wherein the metal element has a lower electronegativity or redox potential than that of the metal in the ions; and &lt;br /&gt;&lt;br /&gt;rubbing the metal element to make nanoparticles.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-5756913240470934341?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/5756913240470934341'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/5756913240470934341'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2012/01/us-patent-8088193-nanoparticle.html' title='US Patent 8088193 - Nanoparticle production via rubbing'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-8849728212237220718</id><published>2011-12-30T23:24:00.002-05:00</published><updated>2011-12-30T23:28:55.541-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Top Ten'/><title type='text'>Top Ten Nanotechnology Patents of 2011</title><content type='html'>Here is a list of the U.S. nanotechnology patents issued over the past year that appear to me to be the most valuable or interesting:&lt;br /&gt;&lt;br /&gt;#10 - &lt;a href="http://www.freepatentsonline.com/7921384.html"&gt;US Patent 7921384&lt;/a&gt; - Nanoscale FPGA for nanorobotics (Neal Soloman)&lt;br /&gt;&lt;br /&gt;I am dubious of the enablement of most "nanorobot" related patents but they can be interesting reading even if they are nonsense.&amp;nbsp; &lt;br /&gt;&lt;br /&gt;#9 - &lt;a href="http://www.freepatentsonline.com/8062407.html"&gt;US Patent 8062407&lt;/a&gt; - Nano-manufacture using household microwave (Northwest Missouri State University&amp;nbsp;)&lt;br /&gt;&lt;br /&gt;This patent&amp;nbsp;warrants the garage inventor of the year award for developing a cheap way to synthesize silver nanoparticles.&lt;br /&gt;&lt;br /&gt;#8 - &lt;a href="http://www.freepatentsonline.com/8057776.html"&gt;US Patent 8057776&lt;/a&gt;&amp;nbsp; - Carbon nanotube manufacture from microalgae (United Arab Emirates University)&lt;br /&gt;&lt;br /&gt;This patent represents the first teaching (to my knowledge) of using biomaterial to create carbon nanotubes. I am not sure how useful this will be but the inventor deserves an A+ for creativity.&lt;br /&gt;&lt;br /&gt;&amp;nbsp;#7 - &lt;a href="http://www.freepatentsonline.com/7922795.html"&gt;US Patent 7922795&lt;/a&gt; - Nanoscale semiconductor membrane (University of Rochester)&lt;br /&gt;&lt;br /&gt;This patent includes some basic claims for semiconductor membranes which may be critical to the development of&amp;nbsp;hydrogen-permeable membranes for fuel cells and pressure sensors.&lt;br /&gt;&lt;br /&gt;#6 - &lt;a href="http://www.freepatentsonline.com/8060217.html"&gt;US Patent 8060217&lt;/a&gt; - Nanowire neural interface (Industry-Academic Cooperation Foundation)&lt;br /&gt;&lt;br /&gt;Neural interfaces&amp;nbsp;are an emerging technology but&amp;nbsp;are limited by the damage done&amp;nbsp;due to&amp;nbsp;electrical signals&amp;nbsp;applied to&amp;nbsp;nerve cells. The teachings of this&amp;nbsp;patent may&amp;nbsp;contribute to a solution which can open up a whole new industry.&lt;br /&gt;&lt;br /&gt;#5 - &lt;a href="http://www.freepatentsonline.com/8068624.html"&gt;US Patent 8068624&lt;/a&gt; - CNT thermoacoustic sound generator (Foxconn)&lt;br /&gt;&lt;br /&gt;This is one of numerous basic patents issued this year to Hon Hai Precision (Foxconn)&amp;nbsp;covering&amp;nbsp;a newly discovered application of carbon nanotubes&amp;nbsp;which may represent one of the most significant developments in the&amp;nbsp;area of sound production&amp;nbsp;in the last 100 years enabling sound without magnetic fields or vibration.&lt;br /&gt;&lt;br /&gt;#4 - &lt;a href="http://www.freepatentsonline.com/8063448.html"&gt;US Patent 8063448&lt;/a&gt; - Memresistor FinFET (Infineon Technologies)&lt;br /&gt;&lt;br /&gt;Two of the leading trends in semiconductor electronics are the use of multi-gate transistor structures and the use of thin film memory resistor materials for memory cells (e.g. phase change memory, ReRAM). this patent includes some basic claims combining these concepts.&lt;br /&gt;&lt;br /&gt;#3 - &lt;a href="http://www.freepatentsonline.com/8053782.html"&gt;US Patent 8053782&lt;/a&gt; - Graphene phototransistor (IBM)&lt;br /&gt;&lt;br /&gt;The 2010 Nobel Prize went to research in the new nanomaterial graphene and&amp;nbsp;inventions based on graphene are in their infancy. This patent&amp;nbsp;includes some basic claims for graphene used in photodetectors.&lt;br /&gt;&lt;br /&gt;#2 - &lt;a href="http://www.freepatentsonline.com/7902541.html"&gt;US Patent 7902541&lt;/a&gt; - Strained nanowire FET (IBM)&lt;br /&gt;&lt;br /&gt;Semiconductor nanowire technology is becoming more sophisticated and IBM is leading the way in&amp;nbsp;manufacturing these materials into&amp;nbsp;future generation high-speed transistors. &lt;br /&gt;&lt;br /&gt;#1 - &lt;a href="http://www.freepatentsonline.com/8066831.html"&gt;US Patent 8066831&lt;/a&gt; - Nanoenergetic power generation (The Curators of the University of Missouri)&lt;br /&gt;&lt;br /&gt;New solutions for energy production are perhaps the key applications for nanomaterials. This patent from the &lt;a href="http://engineering.missouri.edu/grg/2011/03/nanoenergetic-materials-and-applied-research/"&gt;Gangopadhyay Research Group&lt;/a&gt;&amp;nbsp;represents one of the most innovative techniques I have yet&amp;nbsp;heard of&amp;nbsp;for the use of nanomaterials in power generation for portable devices.&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-8849728212237220718?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/8849728212237220718'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/8849728212237220718'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/12/top-ten-nanotechnology-patents-of-2011.html' title='Top Ten Nanotechnology Patents of 2011'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-7807590128257782252</id><published>2011-12-28T15:08:00.000-05:00</published><updated>2011-12-28T15:08:12.887-05:00</updated><title type='text'>US Patent 8086079 - Aligned nanotube array responsive to electromagnetic energy</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8086079.html"&gt;http://www.freepatentsonline.com/8086079.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;Back in 1997 inventor Robert Crowley recognized several uses of carbon nanotubes as an optical antenna and filed several basic patents based on these ideas. This is the latest of his patents including some broad claims covering carbon nanotubes responding to electromagnetic energy.&amp;nbsp;It may be noteworthy that this patent and&amp;nbsp;the parent&amp;nbsp;patents were&amp;nbsp;recently featured in a patent auction (&lt;a href="http://icappatentbrokerage.com/item-for-sale/sealed-bid-nanotube-linear-nonlinear-conductors-electronic-devices"&gt;link&lt;/a&gt;). Claim 1 reads:&amp;nbsp;&amp;nbsp;&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. An electrical device for the utilization of electromagnetic energy, the device comprising: &lt;br /&gt;&lt;br /&gt;a substrate; and &lt;br /&gt;&lt;br /&gt;an aligned array of electromagnetic energy responsive nanotubes supported by and extending through the substrate, arranged to respond to electromagnetic energy.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-7807590128257782252?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/7807590128257782252'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/7807590128257782252'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/12/us-patent-8086079-aligned-nanotube.html' title='US Patent 8086079 - Aligned nanotube array responsive to electromagnetic energy'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-2067561573049210517</id><published>2011-12-28T14:50:00.000-05:00</published><updated>2011-12-28T14:50:11.601-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Hon Hai Precision'/><category scheme='http://www.blogger.com/atom/ns#' term='Tsinghua University'/><title type='text'>US Patent 8084927 - CNT twisted wire electron emitter</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8084927.html"&gt;http://www.freepatentsonline.com/8084927.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;There have been a wide variety of patents issued over the past decade for carbon nanotubes exhibiting electron emission for applications in flat panel displays, lighting, and sensors. Most of these patents are based on field emission&amp;nbsp;effects of the carbon nanotubes&amp;nbsp;but this latest patent from Foxconn teaches a new type of nanotube electron emitter based on thermionic emission which can improve the mechanical durability&amp;nbsp;and lifespan of&amp;nbsp;devices such as gas lasers, arc-welders, plasma-cutters, electron microscopes, and x-ray generators. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A thermal electron emitter comprising: &lt;br /&gt;&lt;br /&gt;at least one carbon nanotube twisted wire comprising a plurality of carbon nanotubes; and &lt;br /&gt;&lt;br /&gt;a plurality of electron emission particles having a work function lower than a work function of the carbon nanotubes, &lt;br /&gt;&lt;br /&gt;wherein at least portions of the plurality of electron emission particles are substantially uniformly dispersed within the twisted wire.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-2067561573049210517?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/2067561573049210517'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/2067561573049210517'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/12/us-patent-8084927-cnt-twisted-wire.html' title='US Patent 8084927 - CNT twisted wire electron emitter'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-7882513132815284215</id><published>2011-12-28T14:39:00.000-05:00</published><updated>2011-12-28T14:39:41.207-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Clarkson University'/><title type='text'>US Patent 8084140 - Silver nanoplatelets</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8084140.html"&gt;http://www.freepatentsonline.com/8084140.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent is from Clarkson University and teaches a method of producing a new variation of&amp;nbsp;silver nanoparticle with applications in electromagnetic shielding. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A metallic nano-platelet comprising between 90% and 99.99% silver by weight; and between 0.01% and 10% palladium by weight. &lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-7882513132815284215?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/7882513132815284215'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/7882513132815284215'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/12/us-patent-8084140-silver-nanoplatelets.html' title='US Patent 8084140 - Silver nanoplatelets'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-1604739410069880334</id><published>2011-12-28T14:30:00.000-05:00</published><updated>2011-12-28T14:30:37.749-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Denso Corporation'/><title type='text'>US Patent 8084011 - Method of increasing thickness of carbon nanotube arrays</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8084011.html"&gt;http://www.freepatentsonline.com/8084011.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;Most of the techniques used to mass produce carbon nanotube arrays involve chemical vapor deposition (CVD). However, there is a limit to the&amp;nbsp;thickness of the nanotubes which can be grown due to the effect of reaction byproduct gas and an excess raw material gas during CVD growth. This patent from the Denso Corporation of Japan teaches a growth method to deal with this problem and grow nanotubes with a greater thickness to improve the efficiency of mass production. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A method of manufacturing a vertically aligned carbon nanotube by using a chemical vapor deposition method, comprising the steps in the order named of: &lt;br /&gt;&lt;br /&gt;providing a substrate and a catalyst to be fixed on the substrate, in a reaction chamber; &lt;br /&gt;&lt;br /&gt;heating the catalyst fixed on the substrate in the reaction chamber; &lt;br /&gt;&lt;br /&gt;filling-up the reaction chamber with a raw material gas serving as a carbon source, thereby synthesizing vertically aligned carbon nanotubes in the reaction chamber; &lt;br /&gt;&lt;br /&gt;after a film thickness of vertically aligned carbon nanotubes synthesized on the substrate has increased by at least a measurable amount, exhausting a reaction byproduct gas from the reaction chamber; and &lt;br /&gt;&lt;br /&gt;repeating the filling-up step and the exhausting step until a film of vertically aligned carbon nanotubes having a desired film thickness is manufactured.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-1604739410069880334?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/1604739410069880334'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/1604739410069880334'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/12/us-patent-8084011-method-of-increasing.html' title='US Patent 8084011 - Method of increasing thickness of carbon nanotube arrays'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-2873626246346481383</id><published>2011-12-22T18:40:00.000-05:00</published><updated>2011-12-22T18:40:46.104-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Hon Hai Precision'/><category scheme='http://www.blogger.com/atom/ns#' term='Tsinghua University'/><title type='text'>US Patent 8081287 - LCD with CNT heater</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8081287.html"&gt;http://www.freepatentsonline.com/8081287.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;The switching voltage of LCDs is sensitive to temperature and&amp;nbsp;a heating&amp;nbsp;layer is used&amp;nbsp;to maintain a consistent temperature. This patent from Hon Hai Precision&amp;nbsp;includes basic claims for using carbon nanotubes in the heating layer to improve efficiency. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A liquid crystal display comprising: &lt;br /&gt;&lt;br /&gt;at least one heating element located on at least one of a first substrate and a second substrate comprising at least one carbon nanotube structure.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-2873626246346481383?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/2873626246346481383'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/2873626246346481383'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/12/us-patent-8081287-lcd-with-cnt-heater.html' title='US Patent 8081287 - LCD with CNT heater'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-7360107195052791279</id><published>2011-12-22T18:32:00.000-05:00</published><updated>2011-12-22T18:32:52.876-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Lockheed Martin'/><title type='text'>US Patent 8080487 - Anti-ballistic nanotube fabric</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8080487.html"&gt;http://www.freepatentsonline.com/8080487.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;Antiballistic fabrics such as Kevlar are useful for creating bulletproof armor but exposure to continuous heat can reduce their effectiveness. This patent from Lockheed Martin teaches using carbon nanotubes&amp;nbsp;in bulletproof fabrics with improved thermal characteristics and lighter weight. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. An antiballistic fabric comprising: &lt;br /&gt;&lt;br /&gt;at least one layer of fabric, wherein at least one layer of fabric comprises fibers, yarns or tow; and &lt;br /&gt;&lt;br /&gt;nanotubes synthesized within interstices between the fibers of at least one layer of fabric and that are entangled with and anchored to the fibers, &lt;br /&gt;&lt;br /&gt;wherein the nanotubes enhance the antiballistic properties of at least one layer of fabric and wherein the nanotubes synthesized within interstices between fibers form a Faraday cage.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-7360107195052791279?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/7360107195052791279'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/7360107195052791279'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/12/us-patent-8080487-anti-ballistic.html' title='US Patent 8080487 - Anti-ballistic nanotube fabric'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-231314374999733182</id><published>2011-12-22T18:21:00.000-05:00</published><updated>2011-12-22T18:21:07.274-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Cree Inc.'/><title type='text'>US Patent 8080441 - Forming graphene sheets from photoresist</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8080441.html"&gt;http://www.freepatentsonline.com/8080441.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;Photoresists are materials having light sensitive properties used in patterning semiconductor and wiring patterns on a substrate. This patent from Cree, Inc. includes some basic claims to a method of forming graphene sheets on a substrate from a photoresist layer. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A method of forming a polygonal carbon layer, the method comprising: &lt;br /&gt;&lt;br /&gt;providing a photoresist layer on a substrate; and &lt;br /&gt;&lt;br /&gt;energizing the photoresist layer until the photoresist layer forms graphene or a graphene-like sheet.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-231314374999733182?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/231314374999733182'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/231314374999733182'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/12/us-patent-8080441-forming-graphene.html' title='US Patent 8080441 - Forming graphene sheets from photoresist'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-6916713902110529797</id><published>2011-12-20T18:22:00.000-05:00</published><updated>2011-12-20T18:22:39.281-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='The Regents of the University of California'/><title type='text'>US Patent 8080405 - Core/shell nanocrystal probes</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8080405.html"&gt;http://www.freepatentsonline.com/8080405.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from the Regents of the University of California has priority going back to 1997 and includes some basic claims for core/shell semiconductor nanocrystals. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A semiconductor nanocrystal composition, comprising: &lt;br /&gt;&lt;br /&gt;a) a core comprising a first semiconductor material; &lt;br /&gt;&lt;br /&gt;b) a core-overcoating shell comprising a second semiconductor material, wherein the core and the core-overcoating shell form a core/shell nanocrystal; and &lt;br /&gt;&lt;br /&gt;c) an encapsulating net surrounding the core/shell nanocrystal.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-6916713902110529797?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6916713902110529797'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6916713902110529797'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/12/us-patent-8080405-coreshell-nanocrystal.html' title='US Patent 8080405 - Core/shell nanocrystal probes'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-1997131762371057542</id><published>2011-12-20T18:17:00.000-05:00</published><updated>2011-12-20T18:17:50.125-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Siemens'/><title type='text'>US Patent 8080278 - Cold gas spraying of nanoparticles</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8080278.html"&gt;http://www.freepatentsonline.com/8080278.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;Thermal spraying is used to deposit and&amp;nbsp;adhere nanoparticle films on substrates but is&amp;nbsp;only practical for types of nanoparticles having a high temperature stability. This patent from Siemens teaches a cold gas spraying method enabling&amp;nbsp;the deposition of nanoparticles having low temperature stability. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A cold gas spraying method, comprising: &lt;br /&gt;&lt;br /&gt;providing a substrate to be coated; &lt;br /&gt;&lt;br /&gt;directing a cold gas jet at the substrate to be coated; and &lt;br /&gt;&lt;br /&gt;forming the coating upon the substrate by the addition of microencapsulated agglomerates of nanoparticles via the cold gas jet.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-1997131762371057542?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/1997131762371057542'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/1997131762371057542'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/12/us-patent-8080278-cold-gas-spraying-of.html' title='US Patent 8080278 - Cold gas spraying of nanoparticles'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-4383818173581408884</id><published>2011-12-20T18:09:00.000-05:00</published><updated>2011-12-20T18:09:01.733-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Ohio University'/><title type='text'>US Patent 8080183 - Nanoparticle assembly with molecular springs</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8080183.html"&gt;http://www.freepatentsonline.com/8080183.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from Ohio University teaches a nanoparticle assembly used as a luminescent tag with improved signal-to-noise ratio compared to semiconductor nanocrystals (i.e. quantum dots). Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A dynamic nanoparticle structure comprising: &lt;br /&gt;&lt;br /&gt;a first nanoparticle; &lt;br /&gt;&lt;br /&gt;a second nanoparticle; and &lt;br /&gt;&lt;br /&gt;a molecular spring, and wherein: &lt;br /&gt;&lt;br /&gt;the first nanoparticle is connected to the second nanoparticle by the molecular spring; &lt;br /&gt;&lt;br /&gt;the first nanoparticle comprises a metallic nanoparticle; &lt;br /&gt;&lt;br /&gt;the second nanoparticle comprises a semiconducting nanoparticle, the semiconducting nanoparticle selected from the group consisting of Cd, CdS, CdSe, CdTe, Si, ZnO and combinations thereof; and &lt;br /&gt;&lt;br /&gt;the molecular spring comprises PEG and derivatives thereof.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-4383818173581408884?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/4383818173581408884'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/4383818173581408884'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/12/us-patent-8080183-nanoparticle-assembly.html' title='US Patent 8080183 - Nanoparticle assembly with molecular springs'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-1971747635135983766</id><published>2011-12-15T17:57:00.000-05:00</published><updated>2011-12-15T17:57:17.757-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Hon Hai Precision'/><category scheme='http://www.blogger.com/atom/ns#' term='Tsinghua University'/><title type='text'>US Patent 8076836 - CNT light source</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8076836.html"&gt;http://www.freepatentsonline.com/8076836.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from Hon Hai Precision (Foxconn) is based on the finding that carbon nanotube films formed with varying density emit polarized light when a current is applied. Claim 7 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;7. A light source comprising: &lt;br /&gt;&lt;br /&gt;a carbon nanotube film comprising a plurality of first areas and a plurality of second areas, the first areas and the second areas each comprising a plurality of successively oriented carbon nanotubes joined end-to-end by Van der Waals attractive force therebetween, wherein the first areas and the second areas have different densities of carbon nanotubes; and &lt;br /&gt;&lt;br /&gt;two electrodes electrically connected to the carbon nanotube film.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-1971747635135983766?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/1971747635135983766'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/1971747635135983766'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/12/us-patent-8076836-cnt-light-source.html' title='US Patent 8076836 - CNT light source'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-5301112669115746923</id><published>2011-12-15T17:48:00.000-05:00</published><updated>2011-12-15T17:48:27.019-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Hon Hai Precision'/><category scheme='http://www.blogger.com/atom/ns#' term='Tsinghua University'/><title type='text'>US Patent 8076829 - CNT artificial muscles</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8076829.html"&gt;http://www.freepatentsonline.com/8076829.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from Hon Hai Precision (Foxconn) teaches a carbon nanotube composite forming an actuator requiring less power to operate than conventional actuating composites. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. An electrostrictive composite comprising: &lt;br /&gt;&lt;br /&gt;a flexible polymer matrix in a sheet structure form; and &lt;br /&gt;&lt;br /&gt;a plurality of one dimensional conductive materials dispersed in the flexible polymer matrix, the one dimensional conductive materials-cooperatively forming an electrically conductive structure in the flexible polymer matrix, &lt;br /&gt;&lt;br /&gt;wherein the one dimensional conductive materials are carbon nanotubes oriented substantially along a preferred orientation and joined end to end by van der Waals attractive force.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-5301112669115746923?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/5301112669115746923'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/5301112669115746923'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/12/us-patent-8076829-cnt-artificial.html' title='US Patent 8076829 - CNT artificial muscles'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-6910040553082216324</id><published>2011-12-15T17:40:00.001-05:00</published><updated>2011-12-15T18:04:25.673-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Harvard'/><title type='text'>US Patent 8076662 - Nanostructured oxide memresistor</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8076662.html"&gt;http://www.freepatentsonline.com/8076662.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;Over the past few years Samsung (&lt;a href="http://www.freepatentsonline.com/7417271.html"&gt;US Patent 7417271&lt;/a&gt;) and Sharp (&lt;a href="http://www.freepatentsonline.com/7796416.html"&gt;US Patent 7796416&lt;/a&gt;) have been developing memory resistors based on metal oxide&amp;nbsp;materials. This latest patent from Harvard&amp;nbsp;teaches another variation of memory resistors&amp;nbsp;including nanodot structures. Claim 7 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;7. An oxide nanostructure, comprising: &lt;br /&gt;&lt;br /&gt;a substrate; &lt;br /&gt;&lt;br /&gt;a nanoscale oxide thin film deposited on the substrate, the nanoscale oxide thin film having a conductance that can be changed by an electric field transmitted across the film; and &lt;br /&gt;&lt;br /&gt;one or more nanodots deposited on the nanoscale oxide thin film; &lt;br /&gt;&lt;br /&gt;wherein the nanodots are adapted, when an electric field is applied thereto, to transmit the electric field across the nanoscale thin film so that the conductance of the thin film is changed and a metal-insulator transition is induced across the thin film.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-6910040553082216324?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6910040553082216324'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6910040553082216324'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/12/us-patent-8076662-nanostructured-oxide.html' title='US Patent 8076662 - Nanostructured oxide memresistor'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-6669843654992565101</id><published>2011-12-14T17:16:00.000-05:00</published><updated>2011-12-14T17:16:04.480-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Sony'/><title type='text'>US Patent 8076583 - CNT light-transmitting electric conductor</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8076583.html"&gt;http://www.freepatentsonline.com/8076583.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from Sony teaches a variation of transparent electrodes based on carbon nanotubes having an improved affinity with light-transmitting supports. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A light-transmitting electric conductor comprising, on a surface of a light-transmitting support: &lt;br /&gt;&lt;br /&gt;a conductive material in which a multiplicity of carbon nanolinear structures are accumulated in two dimensions while making partial contact with each other, &lt;br /&gt;&lt;br /&gt;wherein said conductive material is a light-transmitting conductive material composed of said carbon nanolinear structures, and direct bonds are formed between said surface of said light-transmitting support and said carbon nanolinear structures making contact with said surface without the carbon nanolinear structures being buried in the light-transmitting support, and between said carbon nanolinear structures making contact with each other.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-6669843654992565101?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6669843654992565101'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6669843654992565101'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/12/us-patent-8076583-cnt-light.html' title='US Patent 8076583 - CNT light-transmitting electric conductor'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-8590090214534622356</id><published>2011-12-14T17:06:00.000-05:00</published><updated>2011-12-14T17:06:10.475-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Samsung'/><title type='text'>US Patent 8075950 - Process of preparing graphene nanoshell</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8075950.html"&gt;http://www.freepatentsonline.com/8075950.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;Graphene usually refers to the planar form of a carbon lattice having a honeycomb atomic arrangement. This patent from Samsung teaches a way to form 3D shells of graphene which may have similar properties as carbon nanotubes or fullerene. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A process of preparing a graphene shell, the process comprising: &lt;br /&gt;&lt;br /&gt;forming a graphitizing catalyst in a three-dimensional form; &lt;br /&gt;&lt;br /&gt;coating a polymer on the graphitizing catalyst; &lt;br /&gt;&lt;br /&gt;heat-treating the polymer coated on the graphitizing catalyst in an inert or reductive atmosphere to form a graphene shell; and &lt;br /&gt;&lt;br /&gt;further comprising separating the graphene shell by removing the graphitizing catalyst with an acid-treatment after the heat-treatment. &lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-8590090214534622356?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/8590090214534622356'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/8590090214534622356'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/12/us-patent-8075950-process-of-preparing.html' title='US Patent 8075950 - Process of preparing graphene nanoshell'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-6659414829560593345</id><published>2011-12-14T16:55:00.000-05:00</published><updated>2011-12-14T16:55:44.903-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Samsung'/><title type='text'>US Patent 8075864 - Preparing large area graphene sheets</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8075864.html"&gt;http://www.freepatentsonline.com/8075864.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from Samsung teaches a way to manufacture graphene sheets having a wide area&amp;nbsp;which may&amp;nbsp;assist future mass production&amp;nbsp;of high speed nanoelectronics. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A process of preparing a graphene sheet, the process comprising: &lt;br /&gt;&lt;br /&gt;forming a graphitizing catalyst in the form of a sheet; &lt;br /&gt;&lt;br /&gt;forming a sheet of polymer on the graphitizing catalyst; and &lt;br /&gt;&lt;br /&gt;heat-treating the polymer on the graphitizing catalyst in an inert or reductive atmosphere to form a graphene sheet, &lt;br /&gt;&lt;br /&gt;wherein a width and a length of the graphene sheet are each about 1 millimeter or greater. &lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-6659414829560593345?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6659414829560593345'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6659414829560593345'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/12/us-patent-8075864-preparing-large-area.html' title='US Patent 8075864 - Preparing large area graphene sheets'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-8652541792584140205</id><published>2011-12-13T16:28:00.000-05:00</published><updated>2011-12-13T16:28:28.280-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='M.I.T.'/><title type='text'>US Patent 8075863 - Growing nanowires in a microfluidic environment</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8075863.html"&gt;http://www.freepatentsonline.com/8075863.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;Typically nanowires and nanotubes are grown in reaction chambers having sizes ranging from centimeters to meters in which localized control of growth conditions is difficult. This patent from M.I.T. teaches a method of growing nanostructures in a microfluidic environment to&amp;nbsp;provide localized control of growth conditions. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A method of growing an elongated nanostructure, comprising: &lt;br /&gt;&lt;br /&gt;causing a nanoparticle catalyst to float in a microfluidic channel by applying a magnetic or an electromagnetic field; &lt;br /&gt;&lt;br /&gt;flowing a fluid in a first direction in the microfluidic channel; &lt;br /&gt;&lt;br /&gt;initiating growth of an elongated nanostructure from the nanoparticle catalyst while the catalyst is floating in the microfluidic channel; and &lt;br /&gt;&lt;br /&gt;continuing growth of the elongated nanostructure substantially in the first direction in the microfluidic channel.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-8652541792584140205?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/8652541792584140205'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/8652541792584140205'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/12/us-patent-8075863-growing-nanowires-in.html' title='US Patent 8075863 - Growing nanowires in a microfluidic environment'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-8466083527538057364</id><published>2011-12-13T16:20:00.000-05:00</published><updated>2011-12-13T16:20:31.212-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Teledyne Scientific and Imaging'/><title type='text'>US Patent 8075794 - Magnetic graphite nanoplatelets</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8075794.html"&gt;http://www.freepatentsonline.com/8075794.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from Teledyne Scientific and Imaging teaches a magnetic nanomaterial based on graphite in which the thermal conductivity&amp;nbsp;can be&amp;nbsp;adjusted in a particular direction or plane by controlling the orientation of the magnetic graphitic material. Claim 1 reads:&amp;nbsp;&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A magnetic graphite nanoplatelet compound, comprising: &lt;br /&gt;&lt;br /&gt;a plurality of expanded graphite nanoplatelets having a random orientation; and &lt;br /&gt;&lt;br /&gt;magnetic metal particles dispersed among, and adhered to, the plurality of graphite nanoplatelets.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-8466083527538057364?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/8466083527538057364'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/8466083527538057364'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/12/us-patent-8075794-magnetic-graphite.html' title='US Patent 8075794 - Magnetic graphite nanoplatelets'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-6829920069270244820</id><published>2011-12-13T16:09:00.000-05:00</published><updated>2011-12-13T16:09:44.707-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Alliance for Sustainable Energy'/><title type='text'>US Patent 8075792 - Metal nanoparticle etchant for silicon surfaces</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8075792.html"&gt;http://www.freepatentsonline.com/8075792.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;One way to improve the efficiency of silicon solar cells is to minimize the reflectivity of silicon surfaces. This patent from the Alliance for Sustainable Energy teaches a way to use gold or silver nanoparticles in an etching solution to roughen silicon surfaces and improve the efficiency of silicon solar cells. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A method of texturing a silicon surface, comprising: &lt;br /&gt;&lt;br /&gt;positioning a substrate with a silicon surface in a vessel; &lt;br /&gt;&lt;br /&gt;filling the vessel with a volume of an etching solution that covers the silicon surface of the substrate, wherein the etching solution comprises a catalytic nanomaterial and a oxidant-etchant solution comprising an etching agent and a silicon oxidizing agent; and &lt;br /&gt;&lt;br /&gt;etching the silicon surface by agitating the etching solution in the vessel.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-6829920069270244820?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6829920069270244820'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6829920069270244820'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/12/us-patent-8075792-metal-nanoparticle.html' title='US Patent 8075792 - Metal nanoparticle etchant for silicon surfaces'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-9115428003159738670</id><published>2011-12-13T16:04:00.000-05:00</published><updated>2011-12-13T16:04:26.267-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Hon Hai Precision'/><category scheme='http://www.blogger.com/atom/ns#' term='Foxconn Technology'/><title type='text'>US Patent 8075524 - Syringe set with CNT heater</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8075524.html"&gt;http://www.freepatentsonline.com/8075524.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;For many medical procedures injected fluid needs to be maintained near body temperature. This patent from Hon Hai Precision (Foxconn) teaches using carbon nanotube material as the heater in a syringe set. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A syringe set comprising: &lt;br /&gt;&lt;br /&gt;a syringe; and &lt;br /&gt;&lt;br /&gt;a heating device comprising: &lt;br /&gt;&lt;br /&gt;a heating module in thermal engagement with the syringe, the heating module comprising a heating element, a first electrode and a second electrode, wherein the heating element comprises a plurality of carbon nanotubes forming at least one electrically conductive path between the first electrode and the second electrode, and the first electrode and the second electrode electrically connect with the carbon nanotubes; and &lt;br /&gt;&lt;br /&gt;a body supporting the heating module; &lt;br /&gt;&lt;br /&gt;wherein the at least one electrically conductive path is adapted to convert a current into a heat and transfer the heat. &lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-9115428003159738670?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/9115428003159738670'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/9115428003159738670'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/12/us-patent-8075524-syringe-set-with-cnt.html' title='US Patent 8075524 - Syringe set with CNT heater'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-6254346893966761183</id><published>2011-12-08T17:09:00.000-05:00</published><updated>2011-12-08T17:09:41.529-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='SNU R+DB Foundation'/><title type='text'>US Patent 8072226 - Electrode structure for nanosensor</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8072226.html"&gt;http://www.freepatentsonline.com/8072226.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent teaches a surrounding electrode configuration for a nanosensor&amp;nbsp;which may simplify manufacture. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A sensor comprising: &lt;br /&gt;&lt;br /&gt;a substrate; &lt;br /&gt;&lt;br /&gt;a first electrode disposed on the substrate; &lt;br /&gt;&lt;br /&gt;a second electrode disposed on the substrate, the second electrode being spaced apart from the first electrode and circumscribing at least all sides along at least one axis of the first electrode; and &lt;br /&gt;&lt;br /&gt;at least one nanostructure contacting the first electrode and the second electrode, the at least one nanostructure configured to vary an electrical characteristic according to an object to be sensed; &lt;br /&gt;&lt;br /&gt;wherein the object to be sensed comprises a solution, a liquid, a gas, a molecule, a protein, a virus, a marker, an acid, an ion, an impurity, an electromagnetic radiation, or a particle, and wherein the electrical characteristic comprises a voltage, a current, a resistance or a conductance. &lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-6254346893966761183?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6254346893966761183'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6254346893966761183'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/12/us-patent-8072226-electrode-structure.html' title='US Patent 8072226 - Electrode structure for nanosensor'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-1660072463434704653</id><published>2011-12-08T16:57:00.000-05:00</published><updated>2011-12-08T16:57:13.640-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Samsung'/><title type='text'>US Patent 8072039 - Quantum dot energy conversion film</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8072039.html"&gt;http://www.freepatentsonline.com/8072039.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from Samsung teaches how thin films&amp;nbsp;including quantum dots can be used to convert incoming photons to an energy level capable of being converted to electrical energy. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A solar cell module comprising: &lt;br /&gt;&lt;br /&gt;a solar cell generating an electric current upon absorbing light, and at least one layer comprising a quantum dot and having a thickness of about 20 nanometers to about 10 micrometers, &lt;br /&gt;&lt;br /&gt;wherein the layer converts an incident light to a lower energy light on the entire light incident surface of the solar cell.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-1660072463434704653?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/1660072463434704653'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/1660072463434704653'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/12/us-patent-8072039-quantum-dot-energy.html' title='US Patent 8072039 - Quantum dot energy conversion film'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-4289641658926823857</id><published>2011-12-08T16:50:00.000-05:00</published><updated>2011-12-08T16:50:45.109-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='University of Michigan'/><title type='text'>US Patent 8071972 - Silicon memresistor nanowire crossbar array</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8071972.html"&gt;http://www.freepatentsonline.com/8071972.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;In the past decade there have been several proposals for using chalcogenide or metal oxide materials in crossbar arrays to construct a form a high density non-volatile memory called &lt;a href="http://en.wikipedia.org/wiki/Resistive_random-access_memory"&gt;RRAM&lt;/a&gt;. This patent from the University of Michigan teaches a new variation of RRAM based on amorphous silicon pillars having nanoscale dimensions.Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A crossbar memory array, comprising: &lt;br /&gt;&lt;br /&gt;a first array of nanowires of a first material; &lt;br /&gt;&lt;br /&gt;a second array of nanowires of a different second material oriented at an angle with the first array; and &lt;br /&gt;&lt;br /&gt;a plurality of non-crystalline silicon nanostructures, each intersection of the first array and the second array including one of the non-crystalline silicon nanostructures disposed between a nanowire of the first material and a nanowire of the second material to form a resistive memory cell; &lt;br /&gt;&lt;br /&gt;wherein at least one of the plurality of non-crystalline silicon nanostructures is a nanoscale pillar providing a contact point between the first and second arrays at exactly one intersection.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-4289641658926823857?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/4289641658926823857'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/4289641658926823857'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/12/us-patent-8071972-silicon-memresistor.html' title='US Patent 8071972 - Silicon memresistor nanowire crossbar array'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-65137382082117919</id><published>2011-12-06T17:26:00.000-05:00</published><updated>2011-12-06T17:26:50.108-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='The Regents of the University of California'/><title type='text'>US Patent 8071359 - Core/shell nanocrystal bioprobes</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8071359.html"&gt;http://www.freepatentsonline.com/8071359.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from the Regents of the University of California has priority going back to 1997 and includes some basic claims to core/shell nanocrystals used in bioprobes. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A luminescent semiconductor nanocrystal composition, comprising: &lt;br /&gt;&lt;br /&gt;a semiconductor core comprising a first semiconductor material; &lt;br /&gt;&lt;br /&gt;a core-overcoating shell comprising a second semiconductor material which is different from the first semiconductor material, wherein the core and core-overcoating shell form a core/shell nanocrystal; and &lt;br /&gt;&lt;br /&gt;a polymer.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-65137382082117919?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/65137382082117919'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/65137382082117919'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/12/us-patent-8071359-coreshell-nanocrystal.html' title='US Patent 8071359 - Core/shell nanocrystal bioprobes'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-4541037563426729125</id><published>2011-12-06T17:21:00.000-05:00</published><updated>2011-12-06T17:21:39.172-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='International Technology Center'/><title type='text'>US Patent 8070988 - Nano-carbon hybrid structures</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8070988.html"&gt;http://www.freepatentsonline.com/8070988.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent teaches a modified example&amp;nbsp;of carbon nanotube and nanodiamond suspension to improve the mechanical properties of nanocomposites. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A stable colloidal suspension of carbon-based nanomaterials in a solvent, comprising: &lt;br /&gt;&lt;br /&gt;a stable colloidal suspension of nanodiamond particles having at least one additional carbon-based nanomaterials disbursed and agitated into the solvent to produce said suspension.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-4541037563426729125?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/4541037563426729125'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/4541037563426729125'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/12/us-patent-8070988-nano-carbon-hybrid.html' title='US Patent 8070988 - Nano-carbon hybrid structures'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-5359335022936942056</id><published>2011-12-06T17:12:00.000-05:00</published><updated>2011-12-06T17:12:15.238-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Caltech'/><title type='text'>US Patent 8069688 - Nanostructured gemstones</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8069688.html"&gt;http://www.freepatentsonline.com/8069688.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from the California Institute of Technology includes some broad claims for gemstones having improved brilliance based on the etching of non-periodic nanometer of micrometer features. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A gemstone comprising a plurality of facets, wherein one or more of the facets have a hazy white-colored appearance, said appearance associated with non-periodic nanometer and/or micrometer sized features on said facets. &lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-5359335022936942056?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/5359335022936942056'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/5359335022936942056'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/12/us-patent-8069688-nanostructured.html' title='US Patent 8069688 - Nanostructured gemstones'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-5744124562935719897</id><published>2011-12-05T17:49:00.002-05:00</published><updated>2011-12-05T18:53:07.690-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='memistor'/><category scheme='http://www.blogger.com/atom/ns#' term='memresistor'/><category scheme='http://www.blogger.com/atom/ns#' term='Hewlett Packard'/><category scheme='http://www.blogger.com/atom/ns#' term='memristor'/><category scheme='http://www.blogger.com/atom/ns#' term='history'/><category scheme='http://www.blogger.com/atom/ns#' term='Bernard Widrow'/><category scheme='http://www.blogger.com/atom/ns#' term='Leon Chua'/><title type='text'>Memistors, Memristors, and Memresistors</title><content type='html'>I recently posted an updated&amp;nbsp;historical review of memory resistors available at this &lt;a href="http://memresistor.wordpress.com/article/memistors-memristors-memresistors-and-23zgknsxnlchu-7/"&gt;link&lt;/a&gt; which may be of interest&amp;nbsp;in relation to&amp;nbsp;ReRAM non-volatile memory&amp;nbsp;and neuromorphic technology.&lt;br /&gt;&lt;br /&gt;&lt;strong&gt;Abstract&lt;/strong&gt;&lt;br /&gt;&lt;br /&gt;&amp;nbsp;In 2008 researchers at Hewlett-Packard announced the physical realization of the “memristor” which was theoretically predicted as a  fundamental non-linear circuit element by Leon Chua in 1971. Since that time there have been numerous scientific papers applying the concept of memory resistors to a wide range of thin film materials used for a new type of non-volatile memory called ReRAM (resistive random-access memory). It has also been noted that memory resistors may be applicable to explain behavior of biological neurons and some research groups have developed circuit designs exploiting memory resistors as components of neuromorphic electronics. This article reviews the historical background of various forms of memory resistors including the Widrow-Hoff memistor, Chua’s memristor model, and a mem-resistor model I developed to correct some of the deficiencies in HP’s memristor model. The potential future of memory resistors with respect to artificial intelligence and robotics is briefly discussed.&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-5744124562935719897?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/5744124562935719897'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/5744124562935719897'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/12/memistors-memristors-memresistors-and.html' title='Memistors, Memristors, and Memresistors'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-3904910196068202124</id><published>2011-12-01T17:41:00.000-05:00</published><updated>2011-12-01T17:41:43.148-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Hon Hai Precision'/><title type='text'>US Patent 8068624 - CNT thermoacoustic sound generator</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8068624.html"&gt;http://www.freepatentsonline.com/8068624.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This is one of the latest patents from Hon Hai Precision (Foxconn) including basic claims for a new application of carbon nanotubes involving thermoacoustic transduction. Claim 20 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;20. An apparatus, the apparatus comprising: &lt;br /&gt;&lt;br /&gt;a sound wave generator, the sound wave generator comprises a carbon nanotube structure; &lt;br /&gt;&lt;br /&gt;the sound wave generator produces sound waves by a thermoacoustic effect.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-3904910196068202124?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/3904910196068202124'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/3904910196068202124'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/12/us-patent-8068624-cnt-thermoacoustic.html' title='US Patent 8068624 - CNT thermoacoustic sound generator'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-9040136511139789193</id><published>2011-12-01T17:37:00.000-05:00</published><updated>2011-12-01T17:37:59.282-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Micron Technology'/><title type='text'>US Patent 8067803 - Nanoparticle recombination sites built into DRAM memory transistor</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8067803.html"&gt;http://www.freepatentsonline.com/8067803.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;Conventional DRAM memory cells include both a capacitor and a transistor but there has been an effort&amp;nbsp;to produce DRAM cells without capacitors to decrease the cell size. This patent from Micron teaches a variation of this approach using nanoparticles as recombination&amp;nbsp;sites&amp;nbsp;for capacitor-less charge storage. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A memory device comprising: &lt;br /&gt;&lt;br /&gt;a partially depleted storage transistor at a surface of a substrate comprising: &lt;br /&gt;&lt;br /&gt;a body portion located between a first source/drain region and a second source/drain region, the body portion including a heavily doped region of a second conductivity type having one of nano-particles and nano-inclusions located therein adjacent to the second source/drain region and separated from the first source/drain region, the first source/drain region and the second source/drain region comprising: &lt;br /&gt;&lt;br /&gt;regions of a first conductivity type, and a gate structure, the gate structure wrapping at least partially around a body portion in at least two spatial planes; &lt;br /&gt;&lt;br /&gt;a bit line connected to the first source/drain region; and &lt;br /&gt;&lt;br /&gt;a word line connected to the gate structure. &lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-9040136511139789193?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/9040136511139789193'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/9040136511139789193'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/12/us-patent-8067803-nanoparticle.html' title='US Patent 8067803 - Nanoparticle recombination sites built into DRAM memory transistor'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-3981022748641817323</id><published>2011-11-30T18:15:00.000-05:00</published><updated>2011-11-30T18:15:40.142-05:00</updated><title type='text'>US Patent 8067758 - Nanostructured nuclear radiation shielding</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8067758.html"&gt;http://www.freepatentsonline.com/8067758.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent teaches how nanostructured materials can be used to produce improved shielding for nuclear power plants or in medical diagnostic devices. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A nuclear radiation and nuclear particles guiding material comprising: &lt;br /&gt;&lt;br /&gt;a) a plurality of layers containing nanostructures, the nanostructures having the role to confine, guide and gyrate the nuclear radiation; &lt;br /&gt;&lt;br /&gt;b) a plurality of layers comprising piezo-electric, ferro electric or magneto-electric material that changes the direction of the guided nuclear radiation inside the guide as a function of an electric signal applied on said material; &lt;br /&gt;&lt;br /&gt;c) a plurality of layers having materials sensitive to the nuclear resonance of the radiation, wherein a selective nuclear radiation resonant absorber is formed therein and &lt;br /&gt;&lt;br /&gt;d) a plurality of layers, fabrics or inserts to increase the chemical or heat resistance, as well as the resistance to radiation with energy lower than that of x-ray radiation energy.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-3981022748641817323?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/3981022748641817323'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/3981022748641817323'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/11/us-patent-8067758-nanostructured.html' title='US Patent 8067758 - Nanostructured nuclear radiation shielding'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-2822916449540552443</id><published>2011-11-30T18:10:00.000-05:00</published><updated>2011-11-30T18:10:43.939-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='University of Missouri'/><title type='text'>US Patent 8066831 - Power generation using nanoenergetic material</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8066831.html"&gt;http://www.freepatentsonline.com/8066831.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;Explosive materials are conventionally not thought to be useful for producing electrical power due to the&amp;nbsp;byproduct of&amp;nbsp;uncontrolled thermal and mechanical forces. This patent from the University of Missouri teaches how nanomaterials might change this perception by producing smaller, controllable explosive reactions during power generation. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A method of generating power comprising: &lt;br /&gt;&lt;br /&gt;igniting nanoenergetic material that is on a substrate, the nanoenergetic material comprising a mixture of oxidizer and fuel nanostructures; &lt;br /&gt;&lt;br /&gt;receiving, with a transducer, energy from a shockwave generated by combustion of the nanoenergetic; and &lt;br /&gt;&lt;br /&gt;using the transducer to convert the energy from the shockwave into electrical energy. &lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-2822916449540552443?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/2822916449540552443'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/2822916449540552443'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/11/us-patent-8066831-power-generation.html' title='US Patent 8066831 - Power generation using nanoenergetic material'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-2895405903371373074</id><published>2011-11-30T18:02:00.000-05:00</published><updated>2011-11-30T18:02:12.221-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='American Express'/><title type='text'>US Patent 8066190 - Transparent credit card with nanostructured ink marking</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8066190.html"&gt;http://www.freepatentsonline.com/8066190.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;Transparency is a desirable feature of credit and debit cards but can make the&amp;nbsp;inclusion of encoding indicia difficult. This patent from American Express teaches using quantum dots and indium tin oxide nanoparticles&amp;nbsp;in an ink for&amp;nbsp;creating&amp;nbsp;transparent security indicia on these cards readable by UV light. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A transaction card having a portion comprising: &lt;br /&gt;&lt;br /&gt;a layer that is at least one of translucent and transparent; &lt;br /&gt;&lt;br /&gt;a first infrared blocking compound associated with said layer; &lt;br /&gt;&lt;br /&gt;a second infrared blocking compound associated with said layer, &lt;br /&gt;&lt;br /&gt;wherein said first infrared blocking compound further comprises nanocrystalline indium tin oxide particles, &lt;br /&gt;&lt;br /&gt;wherein said second infrared blocking compound comprises a quantum dot compound.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-2895405903371373074?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/2895405903371373074'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/2895405903371373074'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/11/us-patent-8066190-transparent-credit.html' title='US Patent 8066190 - Transparent credit card with nanostructured ink marking'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-7061254448269914888</id><published>2011-11-23T21:01:00.000-05:00</published><updated>2011-11-23T21:01:42.736-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Stanford University'/><title type='text'>US Patent 8065634 - Analysis of nanotube logic circuits</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8065634.html"&gt;http://www.freepatentsonline.com/8065634.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from Stanford University teaches designing and forming nanotube logic circuits that are immune to misaligned or misplaced carbon nanotubes. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A method for validating that a nanotube logic network having a plurality of regions is immune to misaligned nanotubes, the method comprising:&lt;br /&gt;&lt;br /&gt;determining, by a computing device comprising a processor, each separate path through a plurality of adjoining regions of the plurality of regions from an input contact region to an output contact region, wherein each of the plurality of regions has an assigned Boolean function based on a conductivity of the respective region, wherein the plurality of regions comprises at least one gate region and at least one nonconductive region or doped region; &lt;br /&gt;&lt;br /&gt;determining, by the computing device, a path function for each separate path based on the assigned Boolean function of each of the plurality of adjoining regions in the separate path; &lt;br /&gt;&lt;br /&gt;determining, by the computing device, a combined path function based on the path function for each separate path; and &lt;br /&gt;&lt;br /&gt;validating the nanotube logic network if the combined path function is equivalent to an intended logic function of the nanotube logic network.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-7061254448269914888?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/7061254448269914888'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/7061254448269914888'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/11/us-patent-8065634-analysis-of-nanotube.html' title='US Patent 8065634 - Analysis of nanotube logic circuits'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-1710057118728804697</id><published>2011-11-23T20:54:00.000-05:00</published><updated>2011-11-23T20:54:55.748-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Toshiba'/><title type='text'>US Patent 8064253 - CNT multi-valued memory</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8064253.html"&gt;http://www.freepatentsonline.com/8064253.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from Toshiba teaches a way to create more&amp;nbsp;reliable multiple bit&amp;nbsp;memory transistors using carbon nanotubes or nanowires. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A multivalued memory device comprising: &lt;br /&gt;&lt;br /&gt;a first multivalued memory transistor and a second multivalued memory transistor, &lt;br /&gt;&lt;br /&gt;wherein the first multivalued transistor has a channel made from at least one carbon nanotube or nanowire, and &lt;br /&gt;&lt;br /&gt;the second multivalued transistor has a channel made from at least two carbon nanotubes or nanowires, &lt;br /&gt;&lt;br /&gt;wherein data is stored by varying the number of carbon nanotubes or nanowires used in each of the respective channels, wherein the channels are at least one carbon nanotube or nanowire which allows current to flow through it.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-1710057118728804697?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/1710057118728804697'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/1710057118728804697'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/11/us-patent-8064253-cnt-multi-valued.html' title='US Patent 8064253 - CNT multi-valued memory'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-1379916302921339648</id><published>2011-11-23T20:46:00.000-05:00</published><updated>2011-11-23T20:46:20.733-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Infineon technologies'/><title type='text'>US Patent 8063448 - Mem-resistor multi-gate FET</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8063448.html"&gt;http://www.freepatentsonline.com/8063448.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;In order to continue the&amp;nbsp;scaling predicted by&amp;nbsp;Moore's Law &lt;a href="http://en.wikipedia.org/wiki/Multigate_device"&gt;multi-gate transistors&lt;/a&gt; will be necessary in the coming decade. There has also been an increasing interest in nanoscale thin films to achieve memory resistive effects for non-volatile memory. This patent from Infineon Technologies&amp;nbsp;encompasses&amp;nbsp;both these trends&amp;nbsp;resulting in a multi-gate memory transistor&amp;nbsp;having improved data retention&amp;nbsp;and reduced size. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A memory device comprising: &lt;br /&gt;&lt;br /&gt;a multi gate field effect transistor having a fin with a contact area comprising a cross section of the fin; and &lt;br /&gt;&lt;br /&gt;a programmable memory element abutting the contact area. &lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-1379916302921339648?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/1379916302921339648'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/1379916302921339648'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/11/us-patent-8063448-mem-resistor-multi.html' title='US Patent 8063448 - Mem-resistor multi-gate FET'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-3130363874378539493</id><published>2011-11-22T16:07:00.000-05:00</published><updated>2011-11-22T16:07:03.778-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Applied Nanotech Holdings'/><title type='text'>US Patent 8062697 - Inkjet fabrication of CNT field emitters</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8062697.html"&gt;http://www.freepatentsonline.com/8062697.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from &lt;a href="http://www.appliednanotech.net/"&gt;Applied Nanotech&lt;/a&gt; has priority going back&amp;nbsp;to 2001 and includes some broad claims for forming field emission displays using inkjet deposition of carbon nanotube materials. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A method for making a field emission cathode comprising the step of &lt;br /&gt;&lt;br /&gt;selectively depositing a field emitter mixture onto a substrate using an ink jet dispenser, &lt;br /&gt;&lt;br /&gt;wherein the field emitter mixture further comprises carbon nanotubes and other nanoparticles comprising other forms of carbon.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-3130363874378539493?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/3130363874378539493'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/3130363874378539493'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/11/us-patent-8062697-inkjet-fabrication-of.html' title='US Patent 8062697 - Inkjet fabrication of CNT field emitters'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-2141901301876821226</id><published>2011-11-22T16:00:00.000-05:00</published><updated>2011-11-22T16:00:50.135-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Raytheon'/><title type='text'>US Patent 8062554 - Electromagnetic field dispersion of nanoparticles</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8062554.html"&gt;http://www.freepatentsonline.com/8062554.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;In order to evenly disperse nanoparticles into polymer composites techniques involving extrusion or functionalization of the nanoparticles have been used. However, these techniques have resulted in damage to the nanoparticles or a reduction in desired mechanical properties of the composite. This patent from Raytheon teaches an alternative dispersion method based on the application of electromagnetic fields. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A method for dispersing nanostructures in a composite matrix material, comprising: &lt;br /&gt;&lt;br /&gt;adding a plurality of nanostructures into the composite matrix material; and &lt;br /&gt;&lt;br /&gt;applying a substantially uniform electromagnetic field to the composite matrix material in a radial direction extending between an interior point of the composite matrix material and an outer edge of the composite matrix material, &lt;br /&gt;&lt;br /&gt;wherein the application of the electromagnetic field causes the plurality of nanostructures to: substantially disperse throughout the composite matrix material; and &lt;br /&gt;&lt;br /&gt;substantially align with the electromagnetic field.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-2141901301876821226?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/2141901301876821226'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/2141901301876821226'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/11/us-patent-8062554-electromagnetic-field.html' title='US Patent 8062554 - Electromagnetic field dispersion of nanoparticles'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-4839932143626963851</id><published>2011-11-22T15:51:00.000-05:00</published><updated>2011-11-22T15:51:19.056-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Northwest Missouri State University'/><title type='text'>US Patent 8062407 - Production of silver nanoparticles using a household microwave</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8062407.html"&gt;http://www.freepatentsonline.com/8062407.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from Northwest Missouri State University teaches a relatively simple and inexpensive method to create silver nanoparticles useful&amp;nbsp;in antimicrobial solutions. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A method of producing silver nanoparticles comprising the steps of:&lt;br /&gt;&lt;br /&gt;providing an aqueous solution containing a quantity of silver nitrate and a quantity of a carbohydrate reductant; &lt;br /&gt;&lt;br /&gt;heating said solution in a household microwave oven; &lt;br /&gt;&lt;br /&gt;separating and collecting silver nanoparticles from said solution; and &lt;br /&gt;&lt;br /&gt;recovering unreacted silver ions from said solution.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-4839932143626963851?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/4839932143626963851'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/4839932143626963851'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/11/us-patent-8062407-production-of-silver.html' title='US Patent 8062407 - Production of silver nanoparticles using a household microwave'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-1101439966725139023</id><published>2011-11-16T17:15:00.000-05:00</published><updated>2011-11-16T17:15:44.103-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Industry-Academic Cooperation Foundation'/><title type='text'>US Patent 8060217 - Nanowire neural device</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8060217.html"&gt;http://www.freepatentsonline.com/8060217.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from Korea's Industry-Academic Cooperation Foundation teaches how nanowires can be used to form a neural interface without killing nerve cells. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A neural device for at least one of obtaining electric signals from nerve fibers or transmitting signals thereto, comprising: &lt;br /&gt;&lt;br /&gt;at least one nanowire configured to be inserted in the nerve fibers; &lt;br /&gt;&lt;br /&gt;a processing module electrically connected with the at least one nanowire; and &lt;br /&gt;&lt;br /&gt;a base, connected to the processing module, the base comprising: a through-hole in the base comprising an inner circumference, and a nanowire support fixed to the inner circumference of the through-hole; &lt;br /&gt;&lt;br /&gt;wherein the at least one nanowire is attached to the nanowire support.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-1101439966725139023?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/1101439966725139023'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/1101439966725139023'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/11/us-patent-8060217-nanowire-neural.html' title='US Patent 8060217 - Nanowire neural device'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-603371411734100358</id><published>2011-11-16T17:08:00.000-05:00</published><updated>2011-11-16T17:08:42.390-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Harvard'/><title type='text'>US Patent 8058640 - Branched nanowires</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8058640.html"&gt;http://www.freepatentsonline.com/8058640.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This is the latest patent from &lt;a href="http://echinacea.harvard.edu/"&gt;Charles Lieber's group&lt;/a&gt; at Harvard teaching a new form of branched nanowire useful to improve light emission devices. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. An article, comprising: &lt;br /&gt;&lt;br /&gt;a branched nanoscale wire comprising a vertex comprising at least a first segment having a first composition; &lt;br /&gt;&lt;br /&gt;a second segment having a second composition different from the first composition; and &lt;br /&gt;&lt;br /&gt;a third segment, wherein the vertex defines a T junction of the first, second, and third segments.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-603371411734100358?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/603371411734100358'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/603371411734100358'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/11/us-patent-8058640-branched-nanowires.html' title='US Patent 8058640 - Branched nanowires'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-6429488867869811801</id><published>2011-11-16T17:02:00.000-05:00</published><updated>2011-11-16T17:02:28.187-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='The Regents of the University of California'/><title type='text'>US Patent 8057863 - Electrostatic force assisted deposition of graphene</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8057863.html"&gt;http://www.freepatentsonline.com/8057863.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from the Regents of the University of California teaches a maskless deposition method for patterning graphene films to create ultrahigh mobility electronic devices. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A method of depositing graphene comprising: &lt;br /&gt;&lt;br /&gt;bringing a stamp into contact with a substrate over a contact area, the stamp having one or more layers of the graphene covering the contact area; &lt;br /&gt;&lt;br /&gt;developing an electric field over the contact area; and &lt;br /&gt;&lt;br /&gt;removing the stamp from the vicinity of the substrate which leaves at least a layer of the graphene substantially covering the contact area.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-6429488867869811801?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6429488867869811801'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6429488867869811801'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/11/us-patent-8057863-electrostatic-force.html' title='US Patent 8057863 - Electrostatic force assisted deposition of graphene'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-8685583046661514840</id><published>2011-11-16T16:57:00.000-05:00</published><updated>2011-11-16T16:57:13.922-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Nanocomp Technologies'/><title type='text'>US Patent 8057777 - Controlling chirality of nanotubes</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8057777.html"&gt;http://www.freepatentsonline.com/8057777.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;There have been many laboratory methods proposed to separate semiconducting from metallic carbon nanotubes after fabrication but most of&amp;nbsp;these methods&amp;nbsp;complicate industrial&amp;nbsp;production of nanotubes. This method from &lt;a href="http://www.nanocomptech.com/"&gt;Nanocomp Technology&lt;/a&gt; instead introduces an approach applied during manufacture where the chirality of the nanotubes&amp;nbsp;which determines the semiconducting or metallic properties is controlled. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A method for manufacturing nanotubes, the method comprising: &lt;br /&gt;&lt;br /&gt;exposing a plurality of catalyst particles from which nanotubes can grow to a substantially high frequency field; &lt;br /&gt;&lt;br /&gt;resonating the catalyst particles at a selected resonant frequency keyed to a radial breathing mode unique to a desired chiral nature of a nanotube to be manufactured; and &lt;br /&gt;&lt;br /&gt;allowing those nanotubes having a resonant frequency substantially similar to the selected resonant frequency, and thus the unique desired chiral nature, to be grown.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-8685583046661514840?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/8685583046661514840'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/8685583046661514840'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/11/us-patent-8057777-controlling-chirality.html' title='US Patent 8057777 - Controlling chirality of nanotubes'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-3310346346289401392</id><published>2011-11-15T14:47:00.000-05:00</published><updated>2011-11-15T14:47:37.105-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='United Arab Emirates University'/><title type='text'>US Patent 8057776 - Production of carbon nanotubes from microalgae</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8057776.html"&gt;http://www.freepatentsonline.com/8057776.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent is from United Arab Emirates University and teaches a new type of carbon nanotube fabrication process using&amp;nbsp;algae as the source material for the nanotubes. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A method of forming carbon nanotubes from microalgae, comprising: &lt;br /&gt;&lt;br /&gt;heating microalgae in an inert atmosphere to form carbon black; &lt;br /&gt;&lt;br /&gt;mixing the carbon black with at least one auto-ignition substance; and &lt;br /&gt;&lt;br /&gt;converting the carbon black to carbon nanotubes in a sealed chamber by heating a mixture of the carbon black and the auto-ignition substance.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-3310346346289401392?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/3310346346289401392'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/3310346346289401392'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/11/us-patent-8057776-production-of-carbon.html' title='US Patent 8057776 - Production of carbon nanotubes from microalgae'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-2000803629169815542</id><published>2011-11-15T14:41:00.000-05:00</published><updated>2011-11-15T14:41:15.990-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Micron Technology'/><title type='text'>US Patent 8057686 - Molecular tag for nanotube separation</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8057686.html"&gt;http://www.freepatentsonline.com/8057686.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from Micron Technology teaches a method of removing defective carbon nanotubes based on molecular tags which are chemisorbed on defective portions of the nanotubes.&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A defective nanotube separation method comprising: &lt;br /&gt;&lt;br /&gt;depositing by atomic layer deposition a tag on a nanotube having a conductive, semiconductive, or insulative type of intrinsic conductivity in a nanotube mixture, the nanotube having a defect, the tag depositing at the defect where a deposition rate is greater than on another nanotube in the mixture lacking the defect, the other nanotube having the same type of intrinsic conductivity as the tagged nanotube, and the tag not depositing on the other nanotube; &lt;br /&gt;&lt;br /&gt;removing the tagged nanotube from the mixture by using the tag; and &lt;br /&gt;&lt;br /&gt;after the removing, the mixture containing the untagged other nanotube having the same type of intrinsic conductivity as the tagged nanotube.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-2000803629169815542?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/2000803629169815542'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/2000803629169815542'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/11/us-patent-8057686-molecular-tag-for.html' title='US Patent 8057686 - Molecular tag for nanotube separation'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-3367068393906742909</id><published>2011-11-15T14:35:00.000-05:00</published><updated>2011-11-15T14:35:44.868-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='VeruTEK Technologies'/><title type='text'>US Patent 8057682 - Plant synthesis of nanoparticle metals for decontamination</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8057682.html"&gt;http://www.freepatentsonline.com/8057682.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from &lt;a href="http://www.verutek.com/"&gt;VeruTEK Technologies&lt;/a&gt; relates to metal nanoparticles formed with solutions of plant extracts and the use of these metal nanoparticles in removing contaminants from soil and groundwater. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A method for reducing the concentration of a contaminant in a medium, comprising: &lt;br /&gt;&lt;br /&gt;combining a metal nanoparticle with the medium; &lt;br /&gt;&lt;br /&gt;introducing a plant-based surfactant into the medium; and &lt;br /&gt;&lt;br /&gt;allowing the metal nanoparticle to reduce the concentration of or stimulate biological reduction of the concentration of the contaminant.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-3367068393906742909?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/3367068393906742909'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/3367068393906742909'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/11/us-patent-8057682-plant-synthesis-of.html' title='US Patent 8057682 - Plant synthesis of nanoparticle metals for decontamination'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-6069900766748653207</id><published>2011-11-10T13:35:00.000-05:00</published><updated>2011-11-10T13:35:53.233-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='IBM'/><title type='text'>US Patent 8053782 - Graphene phototransistor</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8053782.html"&gt;http://www.freepatentsonline.com/8053782.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;Graphene has become increasing popular in the last few years for its potential in achieving high speed nanoelectronics. This patent from IBM teaches additional advantages of graphene to achieve&amp;nbsp;photodetection over a broader range of wavelengths than conventional semiconductor materials. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A photodetecting device comprising: &lt;br /&gt;&lt;br /&gt;a. a substrate; &lt;br /&gt;&lt;br /&gt;b. a gate oxide layer deposited on said substrate; &lt;br /&gt;&lt;br /&gt;c. a channel layer of graphene deposited on said gate oxide layer; and &lt;br /&gt;&lt;br /&gt;d. source and drain contact regions disposed on said graphene layer wherein multiple source and drain regions are provided.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-6069900766748653207?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6069900766748653207'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6069900766748653207'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/11/us-patent-8053782-graphene.html' title='US Patent 8053782 - Graphene phototransistor'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-4947869190784598143</id><published>2011-11-10T13:26:00.000-05:00</published><updated>2011-11-10T13:26:39.570-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Hon Hai Precision Industry'/><title type='text'>US Patent 8053760 - CNT thin film transistor</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8053760.html"&gt;http://www.freepatentsonline.com/8053760.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;There have been numerous patents issued over the past ten years for thin film transistors using carbon nanotube material. This latest version is from Hon Hai Precision (Foxconn) and teaches a CNT thin film transistor with improved carrier mobility. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A thin film transistor comprising: &lt;br /&gt;&lt;br /&gt;a source electrode; &lt;br /&gt;&lt;br /&gt;a drain electrode spaced from the source electrode; &lt;br /&gt;&lt;br /&gt;a semiconductor layer comprising a carbon nanotube structure, the carbon nanotube structure comprises of carbon nanotubes; and &lt;br /&gt;&lt;br /&gt;a gate electrode insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer, wherein the carbon nanotube structure is connected to both the source electrode and the drain electrode, an angle exist between each carbon nanotube of the carbon nanotube structure and a surface of the semiconductor layer, and the angle ranges from about 0 degrees to about 15 degrees. &lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-4947869190784598143?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/4947869190784598143'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/4947869190784598143'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/11/us-patent-8053760-cnt-thin-film.html' title='US Patent 8053760 - CNT thin film transistor'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-1116428417255069735</id><published>2011-11-09T17:23:00.000-05:00</published><updated>2011-11-09T17:23:28.600-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Samsung'/><title type='text'>US Patent 8053135 - Nanoparticle thin film for energy storage</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8053135.html"&gt;http://www.freepatentsonline.com/8053135.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from Samsung teaches a catalyst layer for a fuel cell formed from metal nanoparticles and includes some broad claims covering the layer. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A microporous thin film coated on a substrate, the microporous thin film comprising metal nanoparticles and having a microporous structure with porosity of at least about 20%, wherein the metal nanoparticles have an average particle size ranging from about 1 to about 10 nm.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-1116428417255069735?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/1116428417255069735'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/1116428417255069735'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/11/us-patent-8053135-nanoparticle-thin.html' title='US Patent 8053135 - Nanoparticle thin film for energy storage'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-7323385599282485417</id><published>2011-11-09T17:19:00.000-05:00</published><updated>2011-11-09T17:19:37.970-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Boston Scientific Scimed'/><title type='text'>US Patent 8052989 - Method of coating a medical device with CNT foam</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8052989.html"&gt;http://www.freepatentsonline.com/8052989.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;Carbon nanotubes have been found to be useful as coatings for stents and catheters to provide drug delivery. This patent from Boston Scientific Scimed teaches one method to provide a uniform porous coating of carbon nanotubes on implantable medical devices. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A method of coating a medical device, comprising &lt;br /&gt;&lt;br /&gt;assembling an array of vertically-oriented carbon nanotubes on a surface of the medical device; &lt;br /&gt;&lt;br /&gt;contacting the array of carbon nanotubes with a liquid; and &lt;br /&gt;&lt;br /&gt;evaporating the liquid to form a cellular foam made of carbon nanotubes.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-7323385599282485417?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/7323385599282485417'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/7323385599282485417'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/11/us-patent-8052989-method-of-coating.html' title='US Patent 8052989 - Method of coating a medical device with CNT foam'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-8972878890914885845</id><published>2011-11-09T17:11:00.000-05:00</published><updated>2011-11-09T17:11:51.830-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='UT-Battelle'/><title type='text'>US Patent 8052951 - CNTs grown on bulk materials</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8052951.html"&gt;http://www.freepatentsonline.com/8052951.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from UT-Battelle teaches a way to use different types of support substrates on which to grow carbon nanotube materials and includes some broad claims covering bulk nanotube structures. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A bulk nanotube structure comprising: &lt;br /&gt;&lt;br /&gt;a bulk support media; &lt;br /&gt;&lt;br /&gt;a metal catalyst species comprising aluminum disposed adjacent the bulk support media; and &lt;br /&gt;&lt;br /&gt;a plurality of carbon nanotubes disposed adjacent the metal catalyst species.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-8972878890914885845?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/8972878890914885845'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/8972878890914885845'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/11/us-patent-8052951-cnts-grown-on-bulk.html' title='US Patent 8052951 - CNTs grown on bulk materials'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-2781976976419684395</id><published>2011-11-08T16:09:00.000-05:00</published><updated>2011-11-08T16:09:27.736-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Samsung'/><title type='text'>US Patent 8052855 - CNT gas sensor</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8052855.html"&gt;http://www.freepatentsonline.com/8052855.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from Samsung teaches a carbon nanotube gas sensor having&amp;nbsp;improved sensitivity for sensing stable gases such as carbon dioxide and improving the adhesion between carbon nanotubes and electrodes. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A carbon nanotube gas sensor comprising: &lt;br /&gt;&lt;br /&gt;a substrate; &lt;br /&gt;&lt;br /&gt;an insulating layer formed on the substrate; &lt;br /&gt;&lt;br /&gt;electrodes formed on a same plane of the insulating layer; and &lt;br /&gt;&lt;br /&gt;carbon nanotube barriers, which protrude higher than the electrodes, and are disposed in spaces between the electrodes; and &lt;br /&gt;&lt;br /&gt;gas detecting spaces formed on the electrodes between the carbon nanotube barriers; &lt;br /&gt;&lt;br /&gt;wherein ends of the carbon nanotube barriers are exposed, and the carbon nanotube barriers each comprise a plurality of carbon nanotubes, a first organic polymer, and a different second organic polymer. &lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-2781976976419684395?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/2781976976419684395'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/2781976976419684395'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/11/us-patent-8052855-cnt-gas-sensor.html' title='US Patent 8052855 - CNT gas sensor'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-9185939181521079575</id><published>2011-11-08T16:00:00.000-05:00</published><updated>2011-11-08T16:00:23.379-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Micron Technology'/><title type='text'>US Patent 8052075 - Microwave purification of single walled carbon nanotubes</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8052075.html"&gt;http://www.freepatentsonline.com/8052075.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;&lt;br /&gt;This patent from Micron Technology teaches a way to remove the metallic type of single walled carbon nanotubes&amp;nbsp;leaving single walled nanotubes useful as&amp;nbsp;semiconducting material. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A process, comprising: &lt;br /&gt;&lt;br /&gt;treating a mixture of metallic carbon nanotubes and semiconductive carbon nanotubes in a liquid by applying microwave energy, the liquid selected such that the semiconductive carbon nanotubes do not significantly decompose in the liquid, &lt;br /&gt;&lt;br /&gt;wherein treating the mixture is carried out under conditions of applying the microwave energy to the liquid containing the metallic carbon nanotubes and semiconductive carbon nanotubes to remove metallic carbon nanotubes but to leave semiconductive carbon nantoubes.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-9185939181521079575?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/9185939181521079575'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/9185939181521079575'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/11/us-patent-8052075-microwave.html' title='US Patent 8052075 - Microwave purification of single walled carbon nanotubes'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-2349664231825319226</id><published>2011-11-08T15:51:00.000-05:00</published><updated>2011-11-08T15:51:54.028-05:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Philip Morris'/><title type='text'>US Patent 8051859 - Sputter deposition of nanoparticles on cigarette paper</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8051859.html"&gt;http://www.freepatentsonline.com/8051859.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This is the latest patent from Philip Morris covering a way to deposit nanoparticles during the fabrication of cigarette products in order to assist in the filtration of harmful gases such as carbon monoxide in cigarette smoke. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A method for physical vapor deposition of nanoscale particles directly on a substrate comprising: &lt;br /&gt;&lt;br /&gt;supporting the substrate in a chamber having a target; &lt;br /&gt;&lt;br /&gt;forming nanoscale particles from the target; and &lt;br /&gt;&lt;br /&gt;depositing the nanoscale particles directly on the substrate &lt;br /&gt;&lt;br /&gt;wherein the substrate is selected from the group consisting of tobacco cut filler, cigarette paper and cigarette filter material.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-2349664231825319226?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/2349664231825319226'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/2349664231825319226'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/11/us-patent-8051859-sputter-deposition-of.html' title='US Patent 8051859 - Sputter deposition of nanoparticles on cigarette paper'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-2532706283045321387</id><published>2011-11-03T17:59:00.000-04:00</published><updated>2011-11-03T17:59:05.856-04:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Beijing FUNATE Innovation Technology'/><category scheme='http://www.blogger.com/atom/ns#' term='Hon Hai Precision Industry'/><title type='text'>US Patents 8050430 and 8050431 - CNT sound generator</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8050430.html"&gt;http://www.freepatentsonline.com/8050430.html&lt;/a&gt;&lt;br /&gt;&lt;a href="http://www.freepatentsonline.com/8050431.html"&gt;http://www.freepatentsonline.com/8050431.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;&lt;br /&gt;These are the latest in a series of patents from Beijing FUNATE Innovation Technology and Hon Hai Precision (Foxconn) based on newly discovered applications of carbon nanotubes in sound generation based on a thermoacoustic effect. Claim 1 (of US Patent&amp;nbsp;8050431) reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. An apparatus, the apparatus comprising: &lt;br /&gt;&lt;br /&gt;an electromagnetic signal device; and &lt;br /&gt;&lt;br /&gt;a sound wave generator, the sound wave generator comprises a carbon nanotube structure, the carbon nanotube structure comprises one or more carbon nanotube films, each carbon nanotube film comprises a plurality of carbon nanotubes entangled with each other; &lt;br /&gt;&lt;br /&gt;wherein the electromagnetic signal device is configured to transmit an electromagnetic signal to the carbon nanotube structure, the carbon nanotube structure is configured to convert the electromagnetic signal into heat and transfer the heat to a medium in contact with the sound wave generator, causing a thermoacoustic effect. &lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-2532706283045321387?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/2532706283045321387'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/2532706283045321387'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/11/us-patents-8050430-and-8050431-cnt.html' title='US Patents 8050430 and 8050431 - CNT sound generator'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-454447768592825347</id><published>2011-11-03T17:50:00.000-04:00</published><updated>2011-11-03T17:50:35.304-04:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Micron Technology'/><title type='text'>US Patent 8049514 - Nanotube electron emitter for IC inspection</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8049514.html"&gt;http://www.freepatentsonline.com/8049514.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from Micron Technology teaches a way to improve the resolution of in situ monitoring during the fabrication of integrated circuits by using electron emitting carbon nanotubes in place or the more conventional optical probing methods. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A system for testing integrated circuit substrates, comprising: &lt;br /&gt;&lt;br /&gt;a nanotube emitter assembly to transmit an electrical signal to an integrated circuit substrate; and &lt;br /&gt;&lt;br /&gt;a sensor electrically coupled to the nanotube emitter assembly to sense current associated with the electrical signal and induced through the integrated circuit substrate, &lt;br /&gt;&lt;br /&gt;wherein the nanotube emitter assembly is configured to dry etch insulation material from an incompletely etched recess of the integrated circuit substrate.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-454447768592825347?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/454447768592825347'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/454447768592825347'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/11/us-patent-8049514-nanotube-electron.html' title='US Patent 8049514 - Nanotube electron emitter for IC inspection'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-970423035721879217</id><published>2011-11-03T17:45:00.000-04:00</published><updated>2011-11-03T17:45:10.231-04:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='University of Florida Research Foundation'/><title type='text'>US Patent 8049106 - Semiconductor nanowire network for a solar cell</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8049106.html"&gt;http://www.freepatentsonline.com/8049106.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent comes from research conducted at the &lt;a href="http://www.research.ufl.edu/ufrf/"&gt;University of Florida&lt;/a&gt; and teaches a way to&amp;nbsp;use semiconductor nanowires to form high area contact interfaces to improve the efficiency of solar cells. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A solar cell comprising an active layer, the active layer comprising: &lt;br /&gt;&lt;br /&gt;a first layer comprising a first composition; &lt;br /&gt;&lt;br /&gt;a second layer comprising a second composition; and &lt;br /&gt;&lt;br /&gt;a composite layer disposed between said first and said second layer, said composite layer comprising an interpenetrated network of a third composition and a fourth composition, &lt;br /&gt;&lt;br /&gt;wherein the third composition extends from said first layer to said second layer throughout a thickness of said composite layer, and said fourth composition extends from said second layer to said first layer through said third composition throughout said thickness of said composite layer, &lt;br /&gt;&lt;br /&gt;wherein at least one of said third composition and said fourth composition comprises a plurality of semiconducting nanowires, wherein said semiconducting nanowires comprise InP, Si, GaAs or GaN. &lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-970423035721879217?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/970423035721879217'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/970423035721879217'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/11/us-patent-8049106-semiconductor.html' title='US Patent 8049106 - Semiconductor nanowire network for a solar cell'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-4812363309495070629</id><published>2011-11-02T15:18:00.000-04:00</published><updated>2011-11-02T15:18:21.823-04:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Samsung'/><title type='text'>US Patent 8048688 - Improving thermal and mechanical characteristics of nanotube arrays</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8048688.html"&gt;http://www.freepatentsonline.com/8048688.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from Samsung teaches a way to improve the properties of carbon nanotubes used as a thermal interface material for cooling IC devices. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A method for increasing thermal conductivity and thermal performance of material comprising an array of any of (i) carbon nanotubes (CNTs) arranged vertically, (ii) carbon nanofibers (CNFs) arranged vertically, and (iii) nanowires arranged vertically, comprising: &lt;br /&gt;&lt;br /&gt;repeatedly applying a compressive force to said material, wherein the compressive force is applied in a direction parallel to the any of (i) carbon nanotubes (CNTs) arranged vertically, (ii) carbon nanofibers (CNFs) arranged vertically, and (iii) nanowires arranged vertically.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-4812363309495070629?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/4812363309495070629'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/4812363309495070629'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/11/us-patent-8048688-improving-thermal-and.html' title='US Patent 8048688 - Improving thermal and mechanical characteristics of nanotube arrays'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-6673867815284611580</id><published>2011-11-02T15:09:00.000-04:00</published><updated>2011-11-02T15:09:10.967-04:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Korea Institute of Science and Technology'/><title type='text'>US Patent 8048567 - Nanofiber structured anode for secondary battery</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8048567.html"&gt;http://www.freepatentsonline.com/8048567.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from Korean researchers teaches a rechargable battery with higher speed charging/discharging rates by using nanostructured materials. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. An anode for a secondary battery, comprising: &lt;br /&gt;&lt;br /&gt;an anode collector; and &lt;br /&gt;&lt;br /&gt;a negative active material compressed on at least one surface of the collector and being a thin porous metal oxide layer with a tangled web structure of nano-fibers composed of at least one of nano-grains, nano-rods, and nano-particles.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-6673867815284611580?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6673867815284611580'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6673867815284611580'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/11/us-patent-8048567-nanofiber-structured.html' title='US Patent 8048567 - Nanofiber structured anode for secondary battery'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-396208908627163439</id><published>2011-11-02T15:02:00.000-04:00</published><updated>2011-11-02T15:02:08.594-04:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Naval Research Laboratory'/><title type='text'>US Patent 8048547 - Biological fuel cells with nanoporous membranes</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8048547.html"&gt;http://www.freepatentsonline.com/8048547.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent based on work done at the U.S. Naval Research Labs helps enable miniaturization of biological fuel cells for powering MEMS&amp;nbsp;or NEMS sensor arrays. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A fuel cell comprising: &lt;br /&gt;&lt;br /&gt;an anode chamber, &lt;br /&gt;&lt;br /&gt;a cathode chamber, and &lt;br /&gt;&lt;br /&gt;a nanoporous membrane having a pore size from about 100 nm to about 1000 nm between the anode chamber and the cathode chamber, &lt;br /&gt;&lt;br /&gt;wherein the nanoporous membrane sequesters a microbe in the anode chamber and wherein the nanoporous membrane allows nutrients to flow from the cathode chamber to the anode chamber.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-396208908627163439?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/396208908627163439'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/396208908627163439'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/11/us-patent-8048547-biological-fuel-cells.html' title='US Patent 8048547 - Biological fuel cells with nanoporous membranes'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-1540526461523454298</id><published>2011-11-01T18:06:00.000-04:00</published><updated>2011-11-01T18:06:38.966-04:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Qinetiq Limited'/><title type='text'>US Patent 8048485 - Continuous production of carbon nanostructures</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8048485.html"&gt;http://www.freepatentsonline.com/8048485.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;Most carbon nanotube production&amp;nbsp;methods are batch processes and do not facilitate the continuous production of carbon nanotubes in large amounts. However, this patent from &lt;a href="http://www.qinetiq.com/Pages/default.aspx"&gt;Qinetiq Limited&lt;/a&gt; teaches one method which may allow continuous deposition of CNT films for high throughput production. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A process for growing carbon nanostructures, in which the nanostructures are grown on a continuous, elongate, heated catalytic substrate using chemical vapour deposition to form a coated substrate, the process involving movement of the continuous substrate through one or more deposition chambers, wherein the carbon nanostructures are grown in a continuous or semi-continuous manner, and wherein the deposited carbon nanostructures are removed from the substrate in a further continuous or semi-continuous step.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-1540526461523454298?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/1540526461523454298'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/1540526461523454298'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/11/us-patent-8048485-continuous-production.html' title='US Patent 8048485 - Continuous production of carbon nanostructures'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-3233417723488111526</id><published>2011-11-01T17:56:00.000-04:00</published><updated>2011-11-01T17:56:49.861-04:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='SanDisk3D'/><title type='text'>US Patent 8048474 - Graphene memory resistance cell</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8048474.html"&gt;http://www.freepatentsonline.com/8048474.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;In the past few years &lt;a href="http://www.google.com/patents?id=9iPWAAAAEBAJ&amp;amp;printsec=frontcover&amp;amp;dq=patent:7796416&amp;amp;hl=en&amp;amp;ei=PVyTTvqCA-bX0QHO6ahD&amp;amp;sa=X&amp;amp;oi=book_result&amp;amp;ct=result&amp;amp;resnum=1&amp;amp;ved=0CC8Q6AEwAA"&gt;Sharp&lt;/a&gt; and &lt;a href="http://www.google.com/patents?id=vwOtAAAAEBAJ&amp;amp;printsec=frontcover&amp;amp;dq=7417271&amp;amp;hl=en&amp;amp;ei=8ViTTujdAen40gHE0Okg&amp;amp;sa=X&amp;amp;oi=book_result&amp;amp;ct=result&amp;amp;resnum=1&amp;amp;ved=0CC8Q6AEwAA"&gt;Samsung&lt;/a&gt; have been developing new forms of high endurance non-volatile memory called RRAM based on metal oxide materials. This&amp;nbsp;patent from SanDisk 3D&amp;nbsp;teaches the manufacture of a new variation of RRAM based on graphene. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A method of making a nonvolatile memory cell, comprising: &lt;br /&gt;&lt;br /&gt;forming a steering element; and &lt;br /&gt;&lt;br /&gt;forming a graphene storage element; &lt;br /&gt;&lt;br /&gt;wherein the step of forming the graphene storage element comprises: &lt;br /&gt;&lt;br /&gt;providing a graphene colloid; and &lt;br /&gt;&lt;br /&gt;coating the graphene colloid over a substrate to form a graphene layer.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-3233417723488111526?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/3233417723488111526'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/3233417723488111526'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/11/us-patent-8048474-graphene-memory.html' title='US Patent 8048474 - Graphene memory resistance cell'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-8930578813299133388</id><published>2011-11-01T17:50:00.000-04:00</published><updated>2011-11-01T17:50:02.533-04:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Abbott Cardiovascular Systems'/><title type='text'>US Patent 8048441 - Nanobead releasing medical devices</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8048441.html"&gt;http://www.freepatentsonline.com/8048441.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;&lt;br /&gt;This patent from Abbott Cardiovascular Systems includes some broad claims for drug delivery vascular stents including nanobead layers encapsulating bioactive agents. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A medical device comprising &lt;br /&gt;&lt;br /&gt;a coating, the coating comprising nanobeads embedded in the coating, and the coating comprising a polymer and a material selected from the group consisting of ceramic materials, bioglass, and combinations thereof; &lt;br /&gt;&lt;br /&gt;wherein the coating provides for a controlled release of a bioactive agent or agents encapsulated in the nanobeads, and the nanobeads comprise the one or more bioactive agents and a matrix, the one or more bioactive agents dispersed in the matrix of the nanobeads and the nanobeads being without a shell surrounding the matrix. &lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-8930578813299133388?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/8930578813299133388'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/8930578813299133388'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/11/us-patent-8048441-nanobead-releasing.html' title='US Patent 8048441 - Nanobead releasing medical devices'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-9017662014341153688</id><published>2011-10-27T14:43:00.000-04:00</published><updated>2011-10-27T14:43:13.383-04:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='The Boeing Company'/><title type='text'>US Patent 8044866 - Optically reconfigurable CNT RF antenna</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8044866.html"&gt;http://www.freepatentsonline.com/8044866.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from Boeing teaches how carbon nanotubes can be used to reconfigure RF antennas so as to make them resistant to electromagnetic attack and enable easy change of frequency and direction of operation without adding complex electronics. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A method to electronically steer an antenna's direction of radiation, the method comprising: &lt;br /&gt;&lt;br /&gt;providing a surface-conformal reflector that comprises an array of addressable optical media that illuminate carbon nanotubes; &lt;br /&gt;&lt;br /&gt;radiating a radio frequency signal from a transmitter in the direction of the reflector; and &lt;br /&gt;&lt;br /&gt;selectively addressing the optical media with one or more optical signals to illuminate the carbon nanotubes and switch a state of the carbon nanotubes between their non-metallic states and metallic states to alter a reflection of the radiated radio frequency signal.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-9017662014341153688?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/9017662014341153688'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/9017662014341153688'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/10/us-patent-8044866-optically.html' title='US Patent 8044866 - Optically reconfigurable CNT RF antenna'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-6060459996019245666</id><published>2011-10-27T14:33:00.000-04:00</published><updated>2011-10-27T14:33:55.020-04:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Samsung'/><title type='text'>US Patent 8044750 - SiC/metal nanoresonator</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8044750.html"&gt;http://www.freepatentsonline.com/8044750.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from Samsung teaches a nanoscale resonator capable of operating at room temperature with a resonance frequency in the GHz range. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A nano-resonator including a beam having a composite structure, comprising: &lt;br /&gt;&lt;br /&gt;a silicon carbide beam; &lt;br /&gt;&lt;br /&gt;a metal conductor on the silicon carbide beam, the metal conductor having a density lower than a density of the silicon carbide beam; and &lt;br /&gt;&lt;br /&gt;an oxide layer on the metal conductor. &lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-6060459996019245666?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6060459996019245666'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6060459996019245666'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/10/us-patent-8044750-sicmetal.html' title='US Patent 8044750 - SiC/metal nanoresonator'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-4641871508131670445</id><published>2011-10-27T14:26:00.000-04:00</published><updated>2011-10-27T14:26:36.949-04:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Kulite Semiconductor Products'/><title type='text'>US Patent 8044472 - Graphene pressure sensor</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8044472.html"&gt;http://www.freepatentsonline.com/8044472.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;The application of stress to plural layers of graphene&amp;nbsp;alters the semiconductor bandgap which changes the conductivity of the graphene layers. This patent from&amp;nbsp;Kulite Semiconductor Products teaches using this property to construct a graphene-based pressure sensor. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A transducer comprising: &lt;br /&gt;&lt;br /&gt;a substrate a plurality of graphene semiconductive structures located entirely on a surface of the substrate, each of the graphene semiconductive structures being supported along its entire length by the substrate, wherein an electrical property of the graphene semiconductive structures changes with an applied force; &lt;br /&gt;&lt;br /&gt;one or more metal pads securing at least one of the graphene semiconductive structures to the substrate; and &lt;br /&gt;&lt;br /&gt;a circuit coupled to at least some of the graphene semiconductive structures to provide an output responsive to the change in the electrical property, the output being indicative of the applied force.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-4641871508131670445?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/4641871508131670445'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/4641871508131670445'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/10/us-patent-8044472-graphene-pressure.html' title='US Patent 8044472 - Graphene pressure sensor'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-6098897760108237084</id><published>2011-10-26T19:17:00.000-04:00</published><updated>2011-10-26T19:17:06.245-04:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Nantero'/><title type='text'>US Patent 8044388 - Nanotube-semiconductor contact</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8044388.html"&gt;http://www.freepatentsonline.com/8044388.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This latest patent from &lt;a href="http://www.nantero.com/"&gt;Nantero&lt;/a&gt; has priority going back to 2001 and includes basic claims&amp;nbsp;for interfacing&amp;nbsp;carbon nanotubes with semiconductor material. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A conductive article comprising: &lt;br /&gt;&lt;br /&gt;a semiconductor material substrate; &lt;br /&gt;&lt;br /&gt;a patterned conductive trace disposed on the semiconductor material substrate wherein the trace includes: &lt;br /&gt;&lt;br /&gt;a non-woven nanotube fabric layer comprising a plurality of unaligned nanotubes providing a plurality of conductive pathways along the extent of the trace, and a metal layer adjacent to the non-woven nanotube fabric layer. &lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-6098897760108237084?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6098897760108237084'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/6098897760108237084'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/10/us-patent-8044388-nanotube.html' title='US Patent 8044388 - Nanotube-semiconductor contact'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-165096859266336169</id><published>2011-10-26T19:13:00.000-04:00</published><updated>2011-10-26T19:13:18.063-04:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Hitachi'/><title type='text'>US Patent 8044379 - High density silicon nanowire bundles</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8044379.html"&gt;http://www.freepatentsonline.com/8044379.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from Hitachi teaches the formation of high surface area silicon nanowire arrays useful to increase the sensitivity of nanosensors and contacts in nanoelectronic devices. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A structure comprising: &lt;br /&gt;&lt;br /&gt;well-aligned, densely packed bundles of silicon nanowires, each nanowire having a diameter of less than about 50 nm and a length of 10 nm -100 microns, the dimensions of the nanowires being substantially uniform, the structure consisting essentially of silicon and oxygen, or compounds thereof, and the structure having a porosity of at least 80%. &lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-165096859266336169?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/165096859266336169'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/165096859266336169'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/10/us-patent-8044379-high-density-silicon.html' title='US Patent 8044379 - High density silicon nanowire bundles'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-3995187871092267900</id><published>2011-10-26T19:08:00.000-04:00</published><updated>2011-10-26T19:08:08.080-04:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Samsung'/><title type='text'>US Patent 8043942 - Method for producing core-shell nanowires</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8043942.html"&gt;http://www.freepatentsonline.com/8043942.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from Samsung teaches process steps to form silicon nanowire core/shell pn junctions for use as high efficiency light emitting diodes. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A method for producing core-shell nanowires, the method comprising the steps of: &lt;br /&gt;&lt;br /&gt;(a) forming a metal layer directly on a substrate; &lt;br /&gt;&lt;br /&gt;(b) forming an insulating film on the metal layer; &lt;br /&gt;&lt;br /&gt;(c) patterning the insulating film; &lt;br /&gt;&lt;br /&gt;(d) forming a plurality of nanowire cores in a direction perpendicular to the substrate on areas of the substrate from which portions of the insulating film are removed by the patterning; and &lt;br /&gt;&lt;br /&gt;(e) forming first nanowire shells on surfaces of the nanowire cores to produce the core-shell nanowires.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-3995187871092267900?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/3995187871092267900'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/3995187871092267900'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/10/us-patent-8043942-method-for-producing.html' title='US Patent 8043942 - Method for producing core-shell nanowires'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry><entry><id>tag:blogger.com,1999:blog-27469735.post-1558868742378658053</id><published>2011-10-25T19:01:00.000-04:00</published><updated>2011-10-25T19:01:05.405-04:00</updated><category scheme='http://www.blogger.com/atom/ns#' term='Hewlett Packard'/><title type='text'>US Patent 8043687 - Graphene layer growth</title><content type='html'>&lt;a href="http://www.freepatentsonline.com/8043687.html"&gt;http://www.freepatentsonline.com/8043687.html&lt;/a&gt;&lt;br /&gt;&lt;br /&gt;This patent from HP may provide a step forward for the mass production of graphene films useful for the development of higher speed nanoelectronics. Claim 1 reads:&lt;br /&gt;&lt;br /&gt;&lt;i&gt;1. A method for forming a graphene layer, the method comprising: &lt;br /&gt;&lt;br /&gt;establishing an insulating layer on a substrate such that at least one seed region is formed therein, the insulating layer including a first surface that faces the substrate and a second surface opposed to the first surface that faces away from the substrate; and &lt;br /&gt;&lt;br /&gt;exposing a seed material in the at least one seed region to a carbon-containing precursor gas, thereby initiating nucleation of the graphene layer on the seed material and enabling lateral growth of the graphene layer along at least a portion of the second surface of the insulating layer.&lt;/i&gt;&lt;div class="blogger-post-footer"&gt;&lt;img width='1' height='1' src='https://blogger.googleusercontent.com/tracker/27469735-1558868742378658053?l=tinytechip.blogspot.com' alt='' /&gt;&lt;/div&gt;</content><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/1558868742378658053'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/27469735/posts/default/1558868742378658053'/><link rel='alternate' type='text/html' href='http://tinytechip.blogspot.com/2011/10/us-patent-8043687-graphene-layer-growth.html' title='US Patent 8043687 - Graphene layer growth'/><author><name>blaisemouttet</name><uri>http://www.blogger.com/profile/13400987936419864470</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='http://img2.blogblog.com/img/b16-rounded.gif'/></author></entry></feed>
